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IRF510PBF
MOSFET N-CH 100V 5.6A TO220AB
- 제조업체
- Mfr.부분 #IRF510PBF
- 패키지 TO-220-3
- 데이터시트 IRF510PBF DataSheet
- 재고 있음2299
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사양
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 5.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 540mOhm @ 3.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 180 pF @ 25 V |
| PowerDissipation(Max) | 43W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
One of its key characteristics is a low on-state resistance (R_DS(on)), which allows for efficient power handling with minimal heat generation. The IRF510PBF has a gate threshold voltage (V_GS(th)) typically between 2V and 4V, enabling it to be driven by standard logic levels. Additionally, it is known for its fast switching capabilities, making it ideal for applications such as audio amplifiers, power supplies, and motor control.
The "PBF" in its designation indicates that it is lead-free, complying with environmental regulations such as RoHS. This MOSFET is commonly found in through-hole packages, allowing for easy integration into various circuit designs.
Features
1. Voltage Rating: Drain-Source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of 9.2A, allowing it to handle significant loads.
3. RDS(on): Low on-resistance (typically around 0.5 ohms), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, enabling it to be driven by low-voltage logic levels.
5. Fast Switching Speeds: Capable of switching at high frequencies, ideal for RF and other fast applications.
6. Package Type: Available in TO-220 and TO-247 packages, providing versatility in mounting and heat dissipation.
7. Thermal Performance: Good thermal stability with a maximum junction temperature of 150°C.
These features make the IRF510PBF suitable for various applications, including power supplies, motor control, and amplifiers.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow from the drain to the source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the "on" state. It connects to the load or the power supply.
3. Source (S): This pin is where the current exits the MOSFET when it is conducting. It usually connects to ground in common-source configurations.
The IRF510PBF is commonly used in switching applications, amplifiers, and power control circuits due to its ability to handle significant current and voltage levels.
Manufacturer
Application
1. Power amplifiers in RF and audio circuits.
2. Switching regulators and DC-DC converters.
3. Motor control and drive circuits.
4. Signal amplification in low-frequency applications.
5. Power management in electronic devices.
Its features include low on-resistance and high-speed switching, making it suitable for various power and control applications.
Equivalent
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DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
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EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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