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IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
- 제조업체
- Mfr.부분 #IRF540NSTRLPBF
- 패키지 TO-263-3
- 데이터시트 IRF540NSTRLPBF DataSheet
- 재고 있음4443
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 33A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 44mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 71 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1960 pF @ 25 V |
| PowerDissipation(Max) | 130W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
개요
Description
This MOSFET has a low on-resistance (R_DS(on)) of approximately 0.044 ohms at a gate-source voltage (V_GS) of 10V, allowing for efficient operation with minimal power loss. The IRF540N is characterized by a fast switching speed, which is essential for applications like DC-DC converters, motor drivers, and amplifiers.
The device is encapsulated in a TO-220 package, providing good thermal dissipation, and is ideal for environments requiring reliable performance. Its robustness and efficiency make the IRF540NSTRLPBF a popular choice among engineers in the design of electronic circuits.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Up to 33A at 25°C, allowing for significant current handling.
3. R_DS(on): Low on-resistance of around 0.044 ohms at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V and 4V, enabling efficient drive with low voltage levels.
5. Fast Switching Speed: Designed for high-speed switching, which enhances efficiency in power conversion applications.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and assembly.
7. Temperature Range: Operating junction temperature up to 175°C, allowing for robust performance in demanding environments.
These features make the IRF540NSTRLPBF ideal for applications like power supplies, motor control, and H-bridge circuits.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET. It connects to the positive side of the load.
3. Source (S): This pin is the output side of the MOSFET, connected to ground or the lower side of the load.
The IRF540N has a maximum continuous drain current of 33A and a maximum drain-source voltage (V_DS) of 100V, making it suitable for various switching and amplification applications in power electronics.
Manufacturer
Application
Equivalent
1. IRF540
2. STP40NF10
3. FQP30N06L
4. AO3400
5. BSS140
Always verify specifications such as voltage, current, and gate threshold to ensure compatibility for your specific application.
배송
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