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IRF6201TRPBF
MOSFET N-CH 20V 27A 8SO
- 제조업체
- Mfr.부분 #IRF6201TRPBF
- 패키지
- 데이터시트 IRF6201TRPBF DataSheet
- 재고 있음18794
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사양
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 2.45mOhm @ 27A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 8555 pF @ 16 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Tape & Reel (TR) |
개요
Description
The MOSFET operates efficiently in low-voltage environments and can be driven directly from microcontrollers due to its low gate threshold voltage (VGS(th)). Its TO-220 package allows for effective heat dissipation, making it reliable for high-performance circuits. The device is also RoHS compliant, indicating it meets environmental standards for hazardous substances.
Overall, the IRF6201TRPBF is ideal for applications requiring efficient switching and high current handling, making it a popular choice in electronic design.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 18A, allowing it to handle significant power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.1 ohms at V_GS = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2 to 4V, enabling efficient operation in low-voltage applications.
5. Package: It is available in a TO-220 package, facilitating easy heat dissipation and installation.
6. Fast Switching Speed: Optimized for rapid switching, making it ideal for power supply circuits and motor controls.
These characteristics make the IRF6201TRPBF suitable for a wide range of electronics applications, from consumer devices to industrial machinery.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow from drain to source.
2. Drain (D): This pin is where the main current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin is the terminal through which current enters the MOSFET. It typically connects to ground in low-side switching applications.
4-6. Additional Pins: The remaining three pins are typically related to the substrate and may include connections for enhanced thermal performance or additional features depending on the specific packaging.
The IRF6201TRPBF is commonly used in power switching applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
Application
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