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IRF6216TRPBF
MOSFET P-CH 150V 2.2A 8SO
- 제조업체
- Mfr.부분 #IRF6216TRPBF
- 패키지 8-SOIC
- 데이터시트 IRF6216TRPBF DataSheet
- 재고 있음7115
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 2.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 240mOhm @ 1.3A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 49 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1280 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
It is characterized by fast switching speeds, making it ideal for applications requiring rapid on/off transitions. The device comes in a TO-220 package, allowing for easy heat dissipation. It also includes a built-in body diode that enables it to conduct in reverse, which is beneficial in various circuit configurations.
Overall, the IRF6216TRPBF is widely used in automotive, industrial, and consumer electronics applications due to its robustness, efficiency, and versatility in managing power.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Continuous drain current (I_D) of up to 30A at 25°C.
3. R_DS(on): Low on-resistance (typically 0.025 ohms), which ensures efficient operation and reduced heat generation.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for low-voltage drive.
5. Fast Switching: Enhanced switching performance, suitable for high-frequency applications.
6. Packaging: Available in a compact TO-220 package, facilitating easy integration into circuits.
7. Thermal Performance: Capable of handling high temperatures, with a maximum junction temperature of 175°C.
These features make the IRF6216TRPBF suitable for applications in power supplies, motor control, and other high-efficiency power conversion systems.
Package
Pinout
1. Input Pins (e.g., IN1, IN2): Control the state of the respective MOSFETs.
2. Output Pins (e.g., OUT1, OUT2): Drive the gates of the high-side and low-side MOSFETs.
3. Power Supply Pins (e.g., VCC, VBoot): Supply voltage for the IC and bootstrap voltage for the high-side MOSFET.
4. Ground Pins (e.g., GND): Provide a reference ground for the circuit.
5. Timing Pins (e.g., RT): Used for timing applications and to set the operational frequency.
6. Protection Pins (e.g., VCP, VGS): Monitor and protect against over-voltage and under-voltage conditions.
This configuration enables efficient control of power MOSFETs in various electronic applications.
Manufacturer
Application
Equivalent
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