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IRF630NPBF
MOSFET N-CH 200V 9.3A TO220AB
- 제조업체
- Mfr.부분 #IRF630NPBF
- 패키지 TO-220-3
- 데이터시트 IRF630NPBF DataSheet
- 재고 있음4424
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사양
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 9.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 300mOhm @ 5.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 575 pF @ 25 V |
| PowerDissipation(Max) | 82W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The IRF630NPBF is characterized by its ability to handle significant power and is often used in circuits that require efficient switching capabilities. It has a built-in gate-source protection and is available in a TO-220 package, making it suitable for both PCB mounting and heat dissipation. Additionally, the "NPBF" suffix indicates that it is lead-free and compliant with RoHS standards, making it environmentally friendly.
In summary, the IRF630NPBF is a versatile and efficient MOSFET suitable for various high-voltage applications, offering reliability and performance in power electronics.
Features
- Voltage Rating: Maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
- Current Rating: Continuous drain current (I_D) of 9.2A, allowing efficient current handling.
- On-Resistance: Low R_DS(on) of about 0.35Ω at V_GS = 10V, which minimizes power losses during operation.
- Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, enabling operation at lower gate drive voltages.
- Package: Available in a TO-220 package, facilitating easy heat dissipation and assembly.
- Switching Speed: Fast switching capabilities suitable for high-frequency applications.
These attributes make the IRF630NPBF ideal for use in power supplies, motor control, and other electronic circuits requiring reliable high-voltage switching.
Package
Pinout
1. Gate (G) - Pin 1: This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - Pin 2: This is the terminal through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S) - Pin 3: This is the terminal that connects to the ground or negative supply in a circuit and serves as the return path for the drain current.
The IRF630NPBF is designed for high-speed switching applications and can handle significant voltage and current levels, making it suitable for various power management tasks.
Manufacturer
Application
Equivalent
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