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IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK
- 제조업체
- Mfr.부분 #IRF640NSPBF
- 패키지
- 데이터시트 IRF640NSPBF DataSheet
- 재고 있음24525
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사양
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tube,Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 150mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 67 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1160 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
개요
Description
Key characteristics of the IRF640NSPBF include a low on-resistance (R_DS(on)), typically around 0.36 ohms at V_GS of 10 V, which helps reduce power loss during operation. The device is housed in a TO-220 package, facilitating efficient heat dissipation.
This MOSFET is commonly used in applications such as power supplies, motor drives, and high-voltage switching circuits due to its reliability and efficiency. Additionally, the suffix “NSPBF” indicates it is lead-free and compliant with RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly.
Overall, the IRF640NSPBF is a versatile component ideal for engineers looking to enhance the performance of their power electronic designs.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 9.2A at a case temperature of 25°C.
3. Low R_DS(on): On-resistance is typically 0.36 ohms at V_GS = 10V, which reduces power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for efficient driving.
5. Fast Switching: Designed for rapid switching applications, minimizing delay and energy loss.
6. Surface-Mount Package: Offered in a D2PAK (TO-263) package for easy integration into compact designs.
7. Thermal Performance: Provides good thermal management, facilitating operation in demanding environments.
These features make the IRF640NSPBF suitable for applications such as DC-DC converters, motor control, and power management systems.
Package
Pinout
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D) - This pin connects to the load and is where current flows out when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground (in most applications) and is where the current enters when the MOSFET is turned on.
The IRF640NSPBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a maximum continuous drain current (I_D) of 9.2A. It is widely used in power switching applications and in circuits requiring efficient control of high voltages and currents.
Manufacturer
Application
Equivalent
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