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IRF6710S2TRPBF
MOSFET N-CH 25V 12A DIRECTFET
- 제조업체
- Mfr.부분 #IRF6710S2TRPBF
- 패키지
- 데이터시트 IRF6710S2TRPBF DataSheet
- 재고 있음10294
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사양
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR) |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 25 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Ta), 37A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 5.9mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 13 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1190 pF @ 13 V |
| PowerDissipation(Max) | 1.8W (Ta), 15W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DirectFET™ Isometric S1 |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of 100A, which makes it capable of handling substantial loads. The device is housed in a TO-220 package, facilitating easy heat dissipation and installation on circuit boards.
The IRF6710S2TRPBF is particularly noted for its fast switching capabilities, low gate charge, and low R_DS(on), which contribute to minimal power loss during operation. Additionally, it is RoHS-compliant, ensuring it meets environmental safety standards.
This MOSFET is widely used in applications such as DC-DC converters, power inverters, and other switching power supplies, where efficiency and performance are critical.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for various DC-DC converter and switching applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 62A, allowing it to support high-load applications.
3. Low R_DS(on): With a low on-resistance of around 0.018 ohms (at V_GS = 10V), it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Optimized for rapid switching speeds, making it ideal for high-frequency applications.
5. Thermal Performance: It features a TO-220 package, ensuring effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling compatibility with low-voltage drive circuits.
These features make the IRF6710S2TRPBF suitable for use in power supplies, motor drives, and other high-performance applications.
Package
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the main current flows when the device is on.
3. Source (S) - The terminal through which the current exits when the MOSFET is on.
4. Body Diode (integrated) - Provides a path for current in reverse direction, useful during switching events.
The configuration typically follows a standard layout for power MOSFETs, allowing for easy integration into various circuits, especially in power supply and motor control applications. Be sure to refer to the specific datasheet for detailed electrical characteristics and thermal management recommendations.
Manufacturer
Application
Equivalent
1. BSS138 - small-signal MOSFET
2. IRLZ44N - logic-level N-channel MOSFET
3. STP16NF06 - N-channel MOSFET with higher current rating
Always check specifications for exact voltage, current, and switching characteristics before substituting.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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