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IRF7103TRPBF
MOSFET 2N-CH 50V 3A 8-SOIC
- 제조업체
- Mfr.부분 #IRF7103TRPBF
- 패키지 8-SOIC
- 데이터시트 IRF7103TRPBF DataSheet
- 재고 있음2666
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 50V |
| Current-ContinuousDrain(Id)@25°C | 3A |
| RdsOn(Max)@IdVgs | 130mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 290pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of up to 60A, and a gate threshold voltage (VGS(th)) ranging from 2V to 4V. The device is packaged in a TO-220 form factor, facilitating effective heat dissipation.
The IRF7103TRPBF is also RoHS compliant, ensuring it meets environmental standards. Its fast switching capabilities and robustness make it suitable for applications requiring high efficiency and reliability. Overall, this MOSFET is a versatile component favored in modern electronic designs.
Features
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 60A, depending on thermal conditions.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 10 mΩ at V_GS = 10V, which enhances efficiency and reduces power loss.
4. Fast Switching: Designed for fast switching speeds, which is beneficial for high-frequency applications.
5. Thermal Stability: Features a robust thermal performance, allowing for reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and thermal dissipation.
This MOSFET is ideal for applications such as DC-DC converters, motor drivers, and other power management tasks.
Package
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where current flows out when the MOSFET is on.
3. Source (S) - The terminal through which current enters when the MOSFET is on.
4. Body Diode (integrated) - Provides a path for current flow in the reverse direction, typically used for inductive loads.
5. Substrate (often internally connected to source) - Commonly tied to the source terminal, not usually externally connected.
The IRF7103TRPBF is designed for applications such as power management, motor control, and other switching applications, with high efficiency and fast switching capabilities.
Manufacturer
Application
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