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IRF720PBF
MOSFET N-CH 400V 3.3A TO220AB
- 제조업체
- Mfr.부분 #IRF720PBF
- 패키지
- 데이터시트 IRF720PBF DataSheet
- 재고 있음12519
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사양
| Supplier | Vishay Siliconix |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 400 V |
| Current-ContinuousDrain(Id)@25°C | 3.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.8Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 410 pF @ 25 V |
| PowerDissipation(Max) | 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
Key features include a low on-resistance (R_DS(on)) for improved thermal performance and reduced power losses, as well as a fast switching speed, making it ideal for high-frequency applications. The device is packaged in a TO-220 form factor, facilitating heat dissipation and ease of mounting in electronic assemblies.
As a PbF (lead-free) component, it aligns with environmental regulations, supporting eco-friendly design in electronics. When designing with the IRF720PBF, it is essential to consider gate drive requirements and thermal management to optimize performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Continuous Drain Current: Supports a continuous drain current (I_D) of up to 9.2A at a temperature of 25°C.
3. R_DS(on): The on-resistance (R_DS(on)) is low at approximately 0.35 ohms, enabling efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2V to 4V, allowing for effective control with standard logic levels.
5. Fast Switching: It is capable of fast switching speeds, making it ideal for applications like DC-DC converters and motor drivers.
6. Package Type: Available in a TO-220 package, which provides good thermal management and ease of mounting.
These features make the IRF720PBF suitable for a wide range of applications in power electronics.
Package
Pinout
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load is connected. It allows current to flow from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows from the source to the drain when the device is activated.
The IRF720PBF is commonly used in power switching applications, offering high efficiency and fast switching capabilities.
Manufacturer
Application
Equivalent
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