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IRF7241TRPBF
MOSFET P-CH 40V 6.2A 8SO
- 제조업체
- Mfr.부분 #IRF7241TRPBF
- 패키지 SOIC-8
- 데이터시트 IRF7241TRPBF DataSheet
- 재고 있음6797
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 6.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 41mOhm @ 6.2A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3220 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
Key specifications include a V_DS (drain-source voltage) rating of approximately 30V, and it can handle continuous drain currents of several amperes, depending on the thermal conditions. It is packaged in a compact surface-mount form (TO-220 or similar), facilitating easy integration into circuit designs.
The IRF7241TRPBF is also known for its fast switching capabilities, making it ideal for applications such as DC-DC converters, motor drivers, and power inverters. Its robustness and performance make it a popular choice among engineers for efficient power management solutions.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: Continuous drain current (I_D) up to 55A at 25°C.
3. R_DS(on): Low on-resistance (typically 0.025Ω), enhancing efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: V_GS(th) range of 2V to 4V, allowing for easy drive from low-voltage logic levels.
5. Fast Switching: Suitable for high-speed switching applications, improving overall circuit performance.
6. Package Type: Offered in a TO-220 package for efficient heat dissipation.
7. Applications: Ideal for use in DC-DC converters, motor drivers, and power management circuits.
These characteristics make the IRF7241TRPBF suitable for a variety of electronic applications requiring robust performance and reliability.
Package
Pinout
1. Gate (G) - This terminal is used to control the on/off state of the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D) - The terminal through which the main current flows out of the MOSFET when it is on.
3. Source (S) - The terminal through which the current enters the MOSFET when it is on.
4. Body Diode (integrated) - A parasitic diode is formed between the Drain and the Source, allowing current to flow in the reverse direction when necessary.
This MOSFET is designed for switching and linear applications, with features such as low on-resistance and fast switching speeds, making it suitable for power management in various electronic devices.
Manufacturer
Application
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