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IRF7314TRPBF
MOSFET 2P-CH 20V 5.3A 8-SOIC
- 제조업체
- Mfr.부분 #IRF7314TRPBF
- 패키지 8-SOIC
- 데이터시트 IRF7314TRPBF DataSheet
- 재고 있음2514
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 5.3A |
| RdsOn(Max)@IdVgs | 58mOhm @ 2.9A, 4.5V |
| Vgs(th)(Max)@Id | 700mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 780pF @ 15V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 40V and a maximum continuous drain current (I_D) of 30A, making it capable of handling significant loads. The IRF7314TRPBF also offers fast switching times, allowing for efficient operation in high-frequency applications.
This MOSFET is packaged in a TO-220 format, facilitating heat dissipation and ease of integration into various circuit designs. It is also RoHS-compliant, ensuring it meets environmental standards. Overall, the IRF7314TRPBF is a versatile component for engineers designing power electronics and related systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 42A.
3. On-Resistance: Low R_DS(on) of approximately 8 mΩ at V_GS = 10V, ensuring minimal power loss.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for efficient drive with low gate voltage.
5. Fast Switching: The device is optimized for rapid switching speeds, suitable for applications like DC-DC converters and motor drivers.
6. Package: Available in a TO-220 package that offers excellent thermal performance and allows for easy heat dissipation.
Overall, the IRF7314TRPBF is ideal for power management applications requiring efficient and reliable performance.
Package
Pinout
The pin functions are as follows:
1. Gate (G) - Controls the operation of the MOSFET (turns it on/off).
2. Drain (D) - Connects to the load; current flows out of this pin when the MOSFET is on.
3. Source (S) - Connects to ground or the negative side of the circuit; current flows into this pin.
The configuration typically includes the following:
- Pins 1 and 2: Gate (G) and Source (S).
- Pin 3: Drain (D).
- Pins 4-8: Additional functions may include heat sinking and packaging configurations.
This MOSFET is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for various electronic applications. Always refer to the specific datasheet for detailed information regarding electrical characteristics and recommended operating conditions.
Manufacturer
Application
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