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IRF7351TRPBF
MOSFET 2N-CH 60V 8A 8-SOIC
- 제조업체
- Mfr.부분 #IRF7351TRPBF
- 패키지 SO8
- 데이터시트 IRF7351TRPBF DataSheet
- 재고 있음3581
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 8A |
| RdsOn(Max)@IdVgs | 17.8mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 36nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1330pF @ 30V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 60A, and a gate threshold voltage (V_GS(th)) ranging from 1V to 2V. It operates efficiently with a low gate charge and fast switching speeds, making it ideal for high-frequency applications.
The IRF7351TRPBF is packaged in a TO-220 format, which aids in thermal dissipation, allowing for better performance in demanding environments. It is also RoHS compliant, ensuring it meets environmental standards.
This MOSFET is widely used due to its reliability and efficiency in power management solutions.
Features
- Voltage Rating: V_DS (Drain-Source Voltage) of 50V, providing robust performance in various circuits.
- Current Rating: I_D (Continuous Drain Current) of up to 38A, suitable for high-current applications.
- R_DS(on): Low on-resistance (approximately 0.035 ohm at V_GS = 10V), which minimizes conduction losses.
- Gate Threshold Voltage (V_GS(th)): Typically between 1V to 2.5V, enabling operation with lower gate voltages.
- Fast Switching Speed: Enhanced speed characteristics for improved efficiency in switching applications.
- Package Type: Available in a TO-220 package, making it easy to heat sink and mount in various applications.
- Applications: Ideal for power management, motor drives, and DC-DC converters.
These features make the IRF7351TRPBF suitable for a range of power electronics applications requiring efficient performance and reliability.
Package
Pinout
1. Gate (G): Controls the MOSFET operation; applies voltage to turn the device on or off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it's on.
3. Source (S): The terminal through which the current enters the MOSFET; connected to the ground in common-source configurations.
4. Body Diode (D-S): Internal diode that allows current to flow from the source to the drain when the MOSFET is off, providing protection against reverse current.
For the specific pinout, refer to the manufacturer's datasheet, as the arrangement can vary slightly based on the package type (e.g., TO-220, DPAK). The IRF7351TRPBF is designed for high-speed switching applications and is commonly used in power management and conversion circuits.
Manufacturer
Application
Equivalent
1. STP16NF06 - STMicroelectronics
2. FQP30N06L - Fairchild Semiconductor
3. BSS140 - N-channel, low voltage
4. SIQ40N06 - Vishay
Ensure to check specific ratings and parameters like V_DS, I_D, and R_DS(on) for compatibility in your application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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