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IRF7458TRPBF

Name: IRF7458TRPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 14A 8SO

제조업체
Mfr.부분 #IRF7458TRPBF
패키지
데이터시트 IRF7458TRPBF DataSheet
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사양

Supplier	Infineon Technologies
Package	Tape & Reel (TR),Cut Tape (CT)
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	14A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	10V, 16V
RdsOn(Max)@IdVgs	8mOhm @ 14A, 16V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	59 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	2410 pF @ 15 V
PowerDissipation(Max)	2.5W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-SO

개요

Description

IRF7458TRPBF is a power MOSFET from Infineon (originally International Rectifier). It’s an N-channel enhancement-mode device used for switching in power electronics such as DC-DC converters, SMPS, motor drivers, and high-side/low-side switches.
Key points:
- Function: Low-voltage, high-current switching transistor with low on-resistance to reduce conduction losses.
- Packaging: TRPBF indicates Pb-free, tape-and-reel packaging; exact package type (and pinout) depends on the lot—check the datasheet for your package.
- Typical use: Gate driven by a suitable gate voltage (Vgs) to switch current through the drain-source path; often used with heat sinking for power applications.
- What to verify in the datasheet: Vds (drain-source voltage), Id (continuous drain current), Rds(on), Qgs/Qgd (gate charge), Vgs(th), switching characteristics, and thermal rating.
For precise electrical specs, pinout, thermal data, and package options, consult the official IR/Infineon datasheet or a distributor datasheet for IRF7458TRPBF.

Features

IRF7458TRPBF is an N-channel enhancement‑mode power MOSFET in Pb‑free TRP packaging. Key features:
- Low on-resistance (Rds(on)) for reduced conduction loss
- High drain current capability
- Fast switching with optimized gate charge
- Robust avalanche energy rating for inductive loads
- Trench/gate technology for better performance
- Integrated body diode suitable for switching applications
- Wide operating temperature range
- RoHS compliant, Tape & Reel packaging for automated assembly

Package

TO-252 (DPAK) surface-mount package, Pb-free. Tape-and-Reel (TR) packaging.

Pinout

Pin count: 8 pins (SO-8 / SOP-8 tape-and-reel package).
Function: IRF7458TRPBF is a dual N‑channel enhancement‑mode power MOSFET (two N‑channel FETs in one SO‑8 package) for low‑voltage, high‑current switching applications (synchronous rectification, DC–DC converters, load switching). Each FET has gate, drain and source terminals; the package provides the two FETs and their respective pins (gates, drains, sources) plus common substrate/thermal connections. For exact pin-to-terminal mapping and electrical characteristics, consult the device datasheet.

Manufacturer

The IRF7458TRPBF is manufactured under the International Rectifier (IR) product line, now part of Infineon Technologies AG. Infineon is a global semiconductor company (headquartered in Germany) that designs and manufactures power semiconductors, power-management ICs and related solutions for automotive, industrial, and consumer applications.

Application

IRF7458TRPBF is an N-channel power MOSFET. Typical application areas include:
- Switching regulators and DC-DC converters (buck/boost/buck-boost)
- VRMs and point-of-load power supplies
- Motor drive and control circuits (BLDC, PMSM)
- Automotive and industrial power electronics (12–48 V)
- Solar inverters and energy-storage systems
- High-side/low-side switching and load-switch circuits
- Power management in consumer electronics and adapters