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IRF7809AV
MOSFET N-CH 30V 13.3A 8SO
- 제조업체
- Mfr.부분 #IRF7809AV
- 패키지
- 데이터시트 IRF7809AV DataSheet
- 재고 있음4010
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사양
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 3780 pF @ 16 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
개요
Description
Key characteristics include a threshold voltage (V_GS(th)) ranging from 2V to 4V, ensuring it can be easily driven by standard logic levels. The IRF7809AV is commonly used in applications such as power supplies, motor drives, and inverters, particularly in renewable energy systems and industrial automation.
Its robust construction and thermal performance allow for reliable operation over a wide temperature range. When integrating this MOSFET into designs, proper thermal management and circuitry considerations are essential to maximize its performance and longevity.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 90V, making it suitable for a variety of high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 28A, allowing it to manage significant loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) typically around 0.1 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The IRF7809AV is designed for fast switching speeds, facilitating efficient operation in high-frequency applications.
5. Thermal Performance: It includes a robust thermal resistance rating, enabling it to dissipate heat effectively during operation.
6. Package: The device is available in a TO-220 package, which allows for easy mounting and good thermal management.
These features make the IRF7809AV suitable for use in power supplies, motor control, and other high-performance electronic applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the Drain and Source.
2. Drain (D): This is the terminal through which the load current flows. It connects to the load in the circuit.
3. Source (S): This pin is connected to ground or the negative side of the power supply, completing the circuit.
The IRF7809AV is designed for applications requiring high voltage and current handling, often used in switching and amplification applications. Its specifications allow for efficient switching with low on-resistance, making it suitable for power management solutions.
Manufacturer
Application
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