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IRF7832TRPBF
MOSFET N-CH 30V 20A 8SO
- 제조업체
- Mfr.부분 #IRF7832TRPBF
- 패키지 SO8
- 데이터시트 IRF7832TRPBF DataSheet
- 재고 있음3673
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 4mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.32V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 51 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4310 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 155°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
The IRF7832TRPBF also integrates a fast switching speed, allowing for efficient operation in high-frequency circuits. Its package, typically offered in a TO-220 or similar format, ensures good thermal performance and easy mounting. The device is RoHS-compliant, reflecting a commitment to environmental safety.
Overall, the IRF7832TRPBF is a versatile component that combines high power capability with efficiency, making it suitable for various applications in consumer electronics, industrial machinery, and renewable energy systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-to-medium voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 50A, allowing it to manage significant power loads.
3. Rds(on): The on-resistance is low (approximately 2.5 mΩ at Vgs=10V), which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage (Vgs(th)): The gate threshold is around 1.5V to 3V, allowing it to be driven by low-voltage control signals.
5. Package: It comes in a TO-220 package, providing excellent thermal performance and ease of heat dissipation.
6. Fast Switching: Suitable for fast switching applications, enhancing overall efficiency in power management circuits.
These features make the IRF7832TRPBF ideal for use in DC-DC converters, motor drives, and other power switching applications.
Package
Pinout
1. Gate (G) - Controls the ON/OFF state of the MOSFET.
2. Drain (D) - The terminal through which current flows out when the device is ON.
3. Source (S) - The terminal through which current enters when the device is ON.
4. Body Diode - Integrated parasitic diode between Drain and Source, conducting in the reverse direction.
The IRF7832TRPBF is designed to handle high voltage and current, making it suitable for applications requiring low on-resistance and fast switching capabilities. Its typical maximum ratings include a drain-source voltage of 100V and a continuous drain current of 50A.
Manufacturer
Application
Equivalent
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