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IRF7855TRPBF
MOSFET N-CH 60V 12A 8SO
- 제조업체
- Mfr.부분 #IRF7855TRPBF
- 패키지 SOIC-8
- 데이터시트 IRF7855TRPBF DataSheet
- 재고 있음5567
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 9.4mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 4.9V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 39 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1560 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
This MOSFET is characterized by a low gate threshold voltage, allowing for easy drive with low-voltage control signals. Its robust construction and thermal properties enable reliable operation in demanding environments. The IRF7855TRPBF is available in a TO-220 package, facilitating effective heat dissipation during operation.
Ideal for applications in automotive, industrial, and consumer electronics, it enhances energy efficiency and reduces system costs. Its reliability and performance make it a popular choice among engineers and designers in the power electronics field.
Features
1. Voltage Rating: Maximum V_DS of 55V, suitable for various power applications.
2. Current Rating: Continuous current capability of approximately 70A, enabling high-load applications.
3. R_DS(on): Low on-resistance (around 10 mΩ at V_GS = 10V) for reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage: V_GS(th) typically between 1V to 2.5V, allowing for easy drive by low-voltage circuits.
5. Fast Switching: Optimized for high-speed switching applications, enhancing overall system performance.
6. Package: Available in DPAK or TO-220 packages, facilitating thermal management and ease of handling.
7. Applications: Commonly used in power supplies, DC-DC converters, motor controls, and other power management circuits.
This MOSFET is engineered for robust performance in demanding environments, making it ideal for both industrial and consumer electronics.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the load is connected; current flows out of this pin when the MOSFET is on.
3. Source (S): Connects to ground or the negative side of the circuit; current flows into this pin when the MOSFET is in the on state.
4. Body Diode: Integrated within the MOSFET structure, allowing current to flow from Source to Drain when the MOSFET is off, in case of a reverse voltage condition.
The IRF7855TRPBF features low on-resistance, fast switching speeds, and is suitable for applications such as power management, motor control, and DC-DC converters. It has a maximum drain-to-source voltage (V_DS) of 55V and a maximum continuous drain current (I_D) of 60A.
Manufacturer
Application
Equivalent
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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