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IRF9310PBF
MOSFET P-CH 30V 20A 8SO
- 제조업체
- Mfr.부분 #IRF9310PBF
- 패키지 SO8
- 데이터시트 IRF9310PBF DataSheet
- 재고 있음7645
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사양
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 4.6mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 165 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5250 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
Key specifications include a maximum continuous drain current of around 38A and a gate threshold voltage (V_GS(th)) that allows for easy interfacing with logic-level signals. The IRF9310PBF is housed in a TO-220 package for effective thermal dissipation and is RoHS compliant, ensuring it meets environmental regulations. This MOSFET is widely used in consumer electronics, automotive applications, and industrial equipment due to its robustness and reliability.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) of 55A at 25°C.
3. R_DS(on): Low on-resistance, typically around 0.020 ohms, ensuring efficient power dissipation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 1V to 2V, allowing for easy driving with standard logic levels.
5. Fast Switching Speed: Suitable for applications requiring quick turn-on and turn-off times.
6. Package Type: Available in DPAK and TO-220 packages, facilitating heat dissipation.
7. Robustness: Features a high avalanche rating and is designed to handle repetitive avalanche conditions.
8. Applications: Commonly used in DC-DC converters, motor drivers, and power management circuits.
These characteristics make the IRF9310PBF ideal for automotive, industrial, and consumer electronics applications.
Package
Pinout
1. Gate (G): Controls the switching action of the MOSFET.
2. Drain (D): Connects to the load; current flows out of this terminal when the MOSFET is on.
3. Source (S): Connects to ground or the negative side of the load; current flows into this terminal when the MOSFET is on.
The IRF9310PBF is designed for high-speed switching applications and can handle significant voltage and current levels, making it suitable for power management and switching power supplies.
Manufacturer
Application
Equivalent
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