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IRF9332TRPBF
MOSFET P-CH 30V 9.8A 8SO
- 제조업체
- Mfr.부분 #IRF9332TRPBF
- 패키지
- 데이터시트 IRF9332TRPBF DataSheet
- 재고 있음14259
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사양
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Last Time Buy |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 9.8A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 17.5mOhm @ 9.8A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1270 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
Key specifications include a gate threshold voltage (V_GS(th)) of 1V to 2.5V, enabling it to be driven by low-voltage control signals. Its fast switching speeds contribute to reduced power losses and improved thermal performance. The IRF9332TRPBF is packaged in a TO-220 or similar format, facilitating heat dissipation.
Ideal for both automotive and industrial applications, it is often used in conjunction with microcontrollers and other digital logic devices. When designing circuits with this MOSFET, attention should be given to thermal management and proper driving techniques to ensure optimal performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 62A, which supports high power delivery.
3. On-Resistance: It boasts a low R_DS(on) value, typically around 8.5 mΩ, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1V to 2.5V, allowing for easy interfacing with low-voltage control circuits.
5. Package Type: Available in a TO-220 package, which facilitates effective heat dissipation.
6. Fast Switching Speed: Suitable for high-speed switching applications, improving overall efficiency in power conversion and management circuits.
These features make the IRF9332TRPBF ideal for applications in power supplies, motor drivers, and other electronic circuits where efficient switching is crucial.
Package
Pinout
1. Gate 1 (G1): Input for controlling the first N-channel MOSFET.
2. Drain 1 (D1): Drain terminal for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Gate 2 (G2): Input for controlling the second N-channel MOSFET.
5. Drain 2 (D2): Drain terminal for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET.
7. N/C: Not connected (do not use).
8. N/C: Not connected (do not use).
This device is designed for high-speed switching applications, making it suitable for power management in various electronic circuits.
Manufacturer
Application
Equivalent
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