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IRF9389TRPBF
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
- 제조업체
- Mfr.부분 #IRF9389TRPBF
- 패키지 SO-8
- 데이터시트 IRF9389TRPBF DataSheet
- 재고 있음5108
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 6.8A, 4.6A |
| RdsOn(Max)@IdVgs | 27mOhm @ 6.8A, 10V |
| Vgs(th)(Max)@Id | 2.3V @ 10µA |
| GateCharge(Qg)(Max)@Vgs | 14nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 398pF @ 15V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 60A, and a maximum gate-source voltage (V_GS) of ±20V. The MOSFET is housed in a TO-220 package, making it suitable for heat dissipation. It also has fast switching capabilities, which is crucial for high-frequency applications.
The IRF9389TRPBF is a preferred choice for engineers looking to enhance efficiency and reliability in their designs, thanks to its robust performance and versatility in various electronic circuits.
Features
1. Voltage Rating: Max V_DS of 30V, suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 50A, allowing for robust current handling.
3. R_DS(on): Low on-resistance, typically around 0.008 ohms at V_GS of 10V, minimizing conduction losses.
4. Gate Threshold Voltage: V_GS(th) is typically between 1.0V and 2.5V, enabling operation with lower gate drive voltages.
5. Fast Switching Speed: Designed for efficiency in switching applications, reducing overall power loss.
6. Package: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
7. Applications: Ideal for power supply circuits, motor control, and other high-speed switching applications.
Overall, the IRF9389TRPBF is characterized by excellent thermal performance and efficiency, making it a reliable choice for power electronic designs.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the switching action.
2. Drain (D) - The terminal where the output current flows.
3. Source (S) - The terminal through which the current enters the MOSFET.
4-8. Additional pins for various functions, such as connection to the heat sink or for specific circuit implementations.
This MOSFET operates at high voltage and is optimized for performance in power electronics applications.
Manufacturer
Application
Equivalent
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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