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IRF9610PBF
MOSFET P-CH 200V 1.8A TO220AB
- 제조업체
- Mfr.부분 #IRF9610PBF
- 패키지
- 데이터시트 IRF9610PBF DataSheet
- 재고 있음25560
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사양
| Supplier | Vishay Siliconix |
| Package | Tube |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 1.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3Ohm @ 900mA, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 170 pF @ 25 V |
| PowerDissipation(Max) | 20W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
Key features include a low on-resistance (R_DS(on)) of approximately 0.4 ohms, which enhances efficiency by reducing power losses during operation. The device is also designed for fast switching speeds, facilitating efficient operation in high-frequency applications.
The IRF9610PBF is packaged in a TO-220 form factor, allowing for effective heat dissipation. It is RoHS compliant, indicating that it meets environmental regulations regarding hazardous substances. Common applications include motor control, power converters, and audio amplifiers.
When using the IRF9610PBF, proper thermal management and gate drive considerations are essential to ensure optimal performance and reliability in electronic circuits.
Features
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 60V, making it suitable for various high-voltage applications.
2. Current Rating: Can handle continuous drain currents (I_D) up to 9.2A, depending on conditions.
3. R_DS(on): Low on-resistance (approximately 0.4 Ohms at V_GS = 10V), contributing to reduced power loss and enhanced thermal performance.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) typically between 2V to 4V, allowing for easier switching.
5. Package Type: Available in a TO-220 package, facilitating efficient heat dissipation.
6. Applications: Commonly used in motor control, power supply circuits, and automotive applications due to its high-speed switching capabilities.
7. RoHS Compliant: Environmentally friendly, compliant with RoHS regulations.
These features make the IRF9610PBF an excellent choice for a variety of electronic circuit designs requiring reliable power management.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is where the current enters the MOSFET, and it is typically connected to ground in low-side switching applications.
The IRF9610PBF is designed for applications such as switching and amplification, with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 9.2A. It is commonly used in power management circuits and high-speed switching applications.
Manufacturer
Application
Equivalent
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