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IRFB260NPBF
MOSFET N-CH 200V 56A TO220AB
- 제조업체
- Mfr.부분 #IRFB260NPBF
- 패키지 TO-220-3
- 데이터시트 IRFB260NPBF DataSheet
- 재고 있음6292
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사양
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 56A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 34A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 220 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4220 pF @ 25 V |
| PowerDissipation(Max) | 380W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
With a low on-state resistance (R_DS(on)), typically around 0.075 ohms, the IRFB260NPBF offers reduced power loss during operation, enhancing overall efficiency. Its fast switching capabilities allow for high-frequency operation, essential for modern electronic designs.
The device is housed in a TO-220 package, facilitating effective heat dissipation, and is suitable for mounting on heatsinks for thermal management. Additionally, the "NPBF" designation indicates that it is lead-free and compliant with RoHS standards, making it environmentally friendly.
Overall, the IRFB260NPBF is a versatile and efficient choice for various high-voltage applications in the electronics industry.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 160V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 50A, providing robust performance in power circuits.
3. Low On-Resistance: With a typical R_DS(on) of 0.075 Ohms at V_GS = 10V, it ensures minimal power loss during operation.
4. Fast Switching: Designed for quick switching applications, it supports efficient operation in PWM circuits.
5. Thermal Performance: The package design allows for effective heat dissipation, with a maximum junction temperature of 175°C.
6. TO-220 Package: It comes in a TO-220 package, facilitating easy heat management and assembly.
This makes the IRFB260NPBF suitable for use in power supplies, motor drives, and other high-efficiency applications.
Package
Pinout
1. Gate (G): The control terminal used to turn the MOSFET on or off.
2. Drain (D): The terminal where the current flows out when the device is on.
3. Source (S): The terminal where the current enters when the device is conducting.
The device is designed for high-speed switching applications, featuring low on-resistance and high current handling capabilities, making it suitable for power management, motor drives, and high-efficiency switching applications. Its maximum ratings include a V_DS (drain-source voltage) of 100V and an I_D (continuous drain current) of up to 70A, ensuring robust performance in various applications.
Manufacturer
Application
Equivalent
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