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IRFB3207PBF
MOSFET N-CH 75V 170A TO220AB
- 제조업체
- Mfr.부분 #IRFB3207PBF
- 패키지 TO-220-3
- 데이터시트 IRFB3207PBF DataSheet
- 재고 있음4086
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365 일 보장
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사양
| Package | Bulk,Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 170A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 260 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7600 pF @ 50 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
Its fast switching speeds facilitate efficient conversion and control of power, while the PBF designation indicates that it is lead-free, aligning with modern environmental standards. The IRFB3207PBF is packaged in a TO-220 form factor, allowing for easy mounting and good thermal performance. Overall, it is a reliable choice for engineers looking to improve the efficiency and reliability of their power electronic designs.
Features
1. Voltage Rating: 75V maximum drain-source voltage (Vds).
2. Current Rating: Continuous drain current (Id) of 140A at 25°C, allowing for robust power handling.
3. RDS(on): Low on-resistance of approximately 5.5 mΩ at Vgs = 10V, enabling reduced conduction losses.
4. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, suitable for low-voltage drive circuits.
5. Fast Switching Speed: Designed for high-speed switching, making it ideal for applications like DC-DC converters.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
7. Applications: Commonly used in automotive, industrial, and power management applications.
These features position the IRFB3207PBF as a reliable choice for efficient power conversion and management tasks in various electronic systems.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The output terminal where current flows out from the MOSFET.
3. Source (S): The terminal where current enters the MOSFET.
4. Body Diode: Integrated within the structure, allows current to flow from Drain to Source when the MOSFET is off, providing a path for inductive loads.
This MOSFET is widely used in power applications such as DC-DC converters, motor drives, and inverters due to its high efficiency and low on-resistance characteristics. It can handle high voltage and current, making it suitable for various power management applications.
Manufacturer
Application
Equivalent
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