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IRFB4019PBF
IRFB4019 - 12V-300V N-CHANNEL PO
- 제조업체
- Mfr.부분 #IRFB4019PBF
- 패키지 TO-220-3
- 데이터시트 IRFB4019PBF DataSheet
- 재고 있음5966
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사양
| Package | Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 95mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 4.9V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 800 pF @ 50 V |
| PowerDissipation(Max) | 80W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The IRFB4019PBF is packaged in a TO-220 form factor, facilitating effective heat dissipation and easy mounting onto circuit boards. Its fast switching capabilities contribute to improved system efficiency and reduced heat generation. The PBF designation indicates that the MOSFET is Pb-free and compliant with RoHS standards, making it environmentally friendly.
Overall, the IRFB4019PBF is widely used in applications requiring robust performance, reliability, and efficiency in power management.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 49A.
3. Low R_DS(on): Offers a low on-resistance of approximately 7.5 mΩ, which enhances efficiency by reducing power losses.
4. Fast Switching: Designed for rapid switching applications, suitable for converters and inverters.
5. Temperature Range: Operates effectively over a wide temperature range from -55°C to 170°C, ensuring reliability in various environments.
6. Package Type: Available in a TO-220 package, providing good thermal performance and ease of heat dissipation.
This MOSFET is ideal for applications such as power management systems, motor drives, and high-speed switching applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to the gate turns the MOSFET on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the low side of the load. The current flows into the source from the drain.
4. Body Diode (internal): The MOSFET also has an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when needed.
5. Tab/Heatsink: The tab is used for thermal management and should be connected to a heatsink for efficient heat dissipation.
The IRFB4019PBF is suitable for high-efficiency applications and has a rated maximum drain-source voltage of 100V and a continuous drain current of up to 80A.
Manufacturer
Application
Equivalent
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