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IRFB4321PBF
IRFB4321 - 12V-300V N-CHANNEL PO
- 제조업체
- Mfr.부분 #IRFB4321PBF
- 패키지 TO-220-3
- 데이터시트 IRFB4321PBF DataSheet
- 재고 있음6331
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사양
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 85A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 15mOhm @ 33A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 4460 pF @ 50 V |
| PowerDissipation(Max) | 350W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The device is optimized for fast switching speeds, making it ideal for high-frequency applications. Its TO-220 package allows for efficient heat dissipation, which is crucial for maintaining performance under load. The IRFB4321PBF also meets RoHS compliance standards, ensuring it is environmentally friendly.
Overall, this MOSFET is a reliable choice for engineers looking for efficiency and performance in power electronic circuits.
Features
- Voltage Rating: 100V, suitable for various high-voltage applications.
- Continuous Drain Current: 50A at 25°C, allowing it to handle significant power loads.
- RDS(on): Low on-resistance of approximately 0.048 ohms, enhancing efficiency and reducing heat generation.
- Gate Threshold Voltage: VGS(th) between 2V to 4V, enabling operation with low gate drive voltages.
- Package Type: Available in TO-220 and D2PAK packages, facilitating easy thermal management and mounting options.
- Fast Switching Speed: Ideal for applications requiring rapid switching, such as inverters and DC-DC converters.
- Robustness: Features low gate charge and high-speed operation, making it suitable for high-frequency designs.
Overall, the IRFB4321PBF is a versatile MOSFET well-suited for power management, motor control, and other demanding applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here turns the device on or off.
2. Drain (D): This pin is the output where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the power supply. Current flows from the source to the drain when the MOSFET is on.
4. Tab: The metal tab is typically connected to the drain and is used for heat dissipation.
The IRFB4321PBF is designed for high-efficiency switching applications and features a low on-resistance, making it suitable for power management in various electronic circuits.
Manufacturer
Application
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