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IRFB4332PBF
IRFB4332 - 12V-300V N-CHANNEL PO
- 제조업체
- Mfr.부분 #IRFB4332PBF
- 패키지 TO-220-3
- 데이터시트 IRFB4332PBF DataSheet
- 재고 있음4220
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365 일 보장
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사양
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 33mOhm @ 35A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 5860 pF @ 25 V |
| PowerDissipation(Max) | 390W (Tc) |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The IRFB4332PBF is housed in a TO-220 package, enabling effective heat dissipation. It is specifically designed for use in fast-switching applications, ensuring rapid response times. Additionally, as a lead-free component, it complies with RoHS (Restriction of Hazardous Substances) standards, making it an environmentally friendly choice. Overall, the IRFB4332PBF provides reliability and efficiency for modern electronic systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 75V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (ID) up to 110A, allowing for efficient power management.
3. Low RDS(on): It features a low on-resistance (RDS(on)) value of approximately 0.045Ω at a gate-source voltage (VGS) of 10V, which minimizes power losses and improves efficiency.
4. Fast Switching: The MOSFET is capable of fast switching speeds, benefiting applications that require high-frequency operation.
5. Thermal Performance: It has a high thermal conductivity and can operate in a wide temperature range, enhancing reliability in demanding environments.
6. Package Type: The device is offered in a TO-220 package, providing good heat dissipation characteristics.
These features make the IRFB4332PBF suitable for applications such as DC-DC converters, motor drives, and power management systems.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the load.
In some configurations, the remaining pins serve as additional connections for better thermal management or packaging, depending on the specific package type (e.g., TO-220 or DPAK). The device is designed for high-speed switching applications, featuring low on-resistance and high current capacity, making it suitable for power management and converters.
For detailed specifications such as voltage ratings, current ratings, and thermal characteristics, refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
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