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IRFB4615PBF

Name: IRFB4615PBF
Rating: 4.7 (12 reviews)

IRFB4615 - 12V-300V N-CHANNEL PO

제조업체
Mfr.부분 #IRFB4615PBF
패키지 TO-220-3
데이터시트 IRFB4615PBF DataSheet
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사양

Package	Bulk
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	150 V
Current-ContinuousDrain(Id)@25°C	35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	39mOhm @ 21A, 10V
Vgs(th)(Max)@Id	5V @ 100µA
GateCharge(Qg)(Max)@Vgs	26 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1750 pF @ 50 V
PowerDissipation(Max)	144W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

개요

Description

The IRFB4615PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and performance in power applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 75A (at a temperature of 25°C). The device is characterized by its low on-resistance (R_DS(on)) of approximately 8.5 mΩ, which contributes to reduced power losses during operation.
The IRFB4615PBF is particularly suitable for use in applications like power supplies, motor drives, and DC-DC converters. Its robust thermal performance allows it to handle significant power dissipation, making it ideal for high-current applications. The part is also RoHS compliant, ensuring it meets environmental regulations.
This MOSFET is packaged in a TO-220 format, facilitating easy mounting and heat dissipation. Overall, the IRFB4615PBF is a reliable choice for engineers seeking efficient switching solutions in demanding electronic applications.

Features

The IRFB4615PBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 55V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of up to 110A, making it suitable for high-current applications.
3. On-Resistance: Low R_DS(on) of about 8.5 mΩ at V_GS of 10V, which ensures minimal power loss and heat generation.
4. Gate Threshold Voltage: V_GS(th) ranges between 2V to 4V, allowing for efficient switching at lower gate voltages.
5. Fast Switching Speed: Designed for quick turn-on and turn-off times, ideal for switching power supplies and motor control applications.
6. Thermal Resistance: Low thermal resistance, enabling efficient heat dissipation.
7. Package: Offered in a TO-220 package, which facilitates heat sinking and mounting in various applications.
These features make the IRFB4615PBF suitable for applications such as power management, DC-DC converters, and motor drives.

Package

The IRFB4615PBF is typically packaged in a TO-220 case type. This package is known for its good thermal performance and ease of mounting on heatsinks for efficient heat dissipation in power applications.

Pinout

The IRFB4615PBF is a N-channel MOSFET with a pin count of 6. Its primary function is to serve as a switch or amplifier in electronic circuits, particularly in power management applications.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The terminal where current flows in.
4. Gate-Source Connection (not always used): Can be used for additional connections.
5. Drain-Source Connection (not always used): For specialized applications.
6. Tab: Usually connected to the source for heat dissipation.
This MOSFET is characterized by its high efficiency, low on-resistance, and suitability for applications like DC-DC converters, motor drives, and power inverters.

Manufacturer

The IRFB4615PBF is manufactured by Infineon Technologies AG, a global semiconductor company. Infineon specializes in providing a wide range of products including power semiconductors, sensors, and microcontrollers, primarily for applications in automotive, industrial, and consumer electronics. The company is known for its innovative solutions in power management and energy efficiency, contributing to advancements in various industries. Infineon is headquartered in Neubiberg, Germany, and operates globally, focusing on sustainable technologies and smart solutions.

Application

The IRFB4615PBF is an N-channel MOSFET commonly used in power applications such as DC-DC converters, motor drives, and power management systems. Its high efficiency, low RDS(on), and fast switching capabilities make it suitable for applications in renewable energy systems, electric vehicles, and industrial equipment. It can also be utilized in high-frequency applications and switching power supplies.

Equivalent

Equivalent products to the IRFB4615PBF MOSFET include the STP75NF75, FQD7N60, and RFP75N06. These MOSFETs have similar voltage and current ratings and can often be used as replacements, but always verify specific parameters such as RDS(on) and gate threshold voltage for compatibility in your application.