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IRFB7437PBF
IRFB7437 - 12V-300V N-CHANNEL PO
- 제조업체
- Mfr.부분 #IRFB7437PBF
- 패키지 TO-220-3
- 데이터시트 IRFB7437PBF DataSheet
- 재고 있음6448
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사양
| Package | Bulk |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 2mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.9V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 225 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7330 pF @ 25 V |
| PowerDissipation(Max) | 230W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The MOSFET is housed in a TO-220 package, facilitating easy heat dissipation and mounting for thermal management. Its fast switching capabilities make it ideal for applications requiring rapid turn-on and turn-off cycles. The IRFB7437PBF is also characterized by its ruggedness and reliability, often preferred in designs requiring durable components.
When using the IRFB7437PBF, it's important to consider gate drive requirements and thermal performance to ensure optimal operation. Compliance with RoHS standards makes it an environmentally friendly choice for modern electronic designs.
Features
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 75V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 50A, enabling it to handle significant loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, which reduces power losses and improves efficiency.
4. Fast Switching: The device supports fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It features a maximum junction temperature of 175°C and includes a TO-220 package for effective heat dissipation.
6. Applications: Commonly used in DC-DC converters, motor drives, and other applications requiring efficient power switching.
These attributes make the IRFB7437PBF a versatile choice for engineers looking to optimize performance in power electronics.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching; applying a voltage turns the device on.
2. Drain (D): This pin is where the load is connected; current flows out of the drain when the MOSFET is on.
3. Source (S): This pin is connected to ground or the lower potential; current flows into the source when the MOSFET is conducting.
4. Body Diode (Internal): The IRFB7437PBF has an intrinsic body diode connected between the drain and source, allowing current to flow in the reverse direction when the MOSFET is off.
Key specifications include a maximum drain-source voltage (V_DS) of 55V and a maximum continuous drain current (I_D) of 50A, making it suitable for high-efficiency switching applications.
Manufacturer
Application
Equivalent
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