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IRFBG20PBF
MOSFET N-CH 1000V 1.4A TO220AB
- 제조업체
- Mfr.부분 #IRFBG20PBF
- 패키지 TO-220-3
- 데이터시트 IRFBG20PBF DataSheet
- 재고 있음5239
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사양
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 1.4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 11Ohm @ 840mA, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 500 pF @ 25 V |
| PowerDissipation(Max) | 54W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The IRFBG20PBF is packaged in a TO-220 format, which allows for efficient heat dissipation. It also includes a built-in gate protection feature to safeguard against voltage spikes, enhancing reliability. The "PBF" suffix indicates that the device is lead-free, compliant with RoHS standards.
Overall, the IRFBG20PBF is suitable for applications requiring high efficiency and reliability in power conversion and control.
Features
1. Voltage Rating: Rated for a maximum drain-source voltage (Vds) of 200V, suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 20A, making it ideal for various power switching applications.
3. Low On-Resistance: With a typical Rds(on) of around 0.08 ohms at a gate-source voltage (Vgs) of 10V, it ensures minimal power loss and efficient operation.
4. Fast Switching Speed: Optimized for rapid switching, reducing the time spent in transition states and enhancing overall efficiency.
5. Thermal Performance: Features a TO-220 package for effective heat dissipation, allowing for improved thermal management.
6. Gate Charge (Qg): Low gate charge aids in reducing driving power requirements and improving switching performance.
7. RoHS Compliant: Meets environmental regulations for hazardous substances, ensuring safer usage in various applications.
These characteristics make the IRFBG20PBF suitable for applications in power supplies, motor drives, and other high-efficiency switching scenarios.
Package
Pinout
Pin Count and Functions:
1. Gate (G) - Pin 1: Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D) - Pin 2: The terminal through which the load current flows when the device is on.
3. Source (S) - Pin 3: The terminal that connects to the ground or negative side of the circuit.
The MOSFET has a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 40A. It is popular in applications like power supplies, motor controls, and inverters due to its efficiency and thermal performance.
Manufacturer
Application
Equivalent
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