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IRFH5020TRPBF
MOSFET N-CH 200V 5.1A 8PQFN
- 제조업체
- Mfr.부분 #IRFH5020TRPBF
- 패키지 PG-TDSON-8
- 데이터시트 IRFH5020TRPBF DataSheet
- 재고 있음2354
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 5.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 55mOhm @ 7.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 54 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2290 pF @ 100 V |
| PowerDissipation(Max) | 3.6W (Ta), 8.3W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
개요
Description
Key specifications include a maximum continuous drain current, fast switching speeds, and a compact package size, usually offered in a TO-220 or similar configurations for easy integration into circuits. The IRFH5020TRPBF is known for its thermal performance, making it ideal for high-efficiency designs. Its reliability and robustness make it a popular choice among engineers for both commercial and industrial applications.
For optimal performance, proper thermal management and adherence to electrical ratings are essential during circuit design. This component is widely available and supported by various datasheets and application notes from manufacturers, aiding designers in its implementation.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 20V, making it suitable for low-voltage applications.
2. Current Rating: It supports continuous drain current (ID) up to 50A, enabling robust performance in various load conditions.
3. Low On-Resistance: With a typical RDS(on) of around 5.5 mΩ at a gate-source voltage (VGS) of 10V, it minimizes power loss during operation.
4. Fast Switching: The MOSFET offers rapid switching capabilities, beneficial for applications like DC-DC converters and motor control systems.
5. Thermal Performance: The device is packaged in a TO-220 format, providing good thermal characteristics for effective heat dissipation.
6. Gate Threshold Voltage: It has a gate threshold voltage (VGS(th)) ranging from 1V to 3V, allowing for easy drive with low gate voltages.
These features make the IRFH5020TRPBF ideal for various power management applications.
Package
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET's switching; applies voltage to turn the device on or off.
2. Drain (D): The terminal where the output current flows out from the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Gate-Source (G-S): This is a connection to the gate and source that helps in controlling the device's operation.
5. Drain-Source (D-S): A connection that typically indicates the main current path.
The IRFH5020TRPBF is suitable for applications requiring low on-resistance and high-speed switching.
Manufacturer
Application
Equivalent
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
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