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IRFH5406TRPBF
MOSFET N-CH 60V 11A/40A 8PQFN
- 제조업체
- Mfr.부분 #IRFH5406TRPBF
- 패키지
- 데이터시트 IRFH5406TRPBF DataSheet
- 재고 있음3948
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사양
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRFH5406 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1256 pF @ 25 V |
| Power Dissipation (Max) | 3.6W (Ta), 46W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package | 8-PowerVDFN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
The device is packaged in a surface-mount configuration, making it suitable for compact designs. Its high-speed switching capabilities allow for quick response in dynamic applications, minimizing energy losses. The IRFH5406TRPBF also offers thermal stability, ensuring reliable operation under various conditions.
Overall, this MOSFET is ideal for engineers seeking robust performance in high-efficiency circuits.
Features
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle significant voltage levels.
- Current Rating: The device can conduct a continuous drain current (I_D) of up to 60A, making it suitable for high-current applications.
- R_DS(on): It offers a low on-resistance (R_DS(on)) of around 6.6 mΩ at V_GS = 10V, which minimizes conduction losses and improves efficiency.
- Switching Speed: Fast switching capabilities support high-frequency operation in various applications.
- Package: Available in a DPAK package, providing good thermal performance and ease of mounting.
- Applications: Commonly used in power supplies, motor drivers, and other power management circuits.
Overall, the IRFH5406TRPBF is designed for robust performance in demanding electrical environments, delivering efficiency and reliability.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal connected to ground or the lower potential side of the circuit.
4. Body Diode - Internal to the MOSFET, allows current to flow from the source to drain when the MOSFET is off.
The device is designed for applications like motor control, power management, and DC-DC converters, with a maximum drain-source voltage of 55V and a continuous drain current of up to 54A. The IRFH5406TRPBF features a low R_DS(on), making it efficient for high-performance applications.
Manufacturer
Application
Equivalent
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