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IRFH8318TRPBF
MOSFET N-CH 30V 27A/120A PQFN
- 제조업체
- Mfr.부분 #IRFH8318TRPBF
- 패키지 PQFN-8
- 데이터시트 IRFH8318TRPBF DataSheet
- 재고 있음7082
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 27A (Ta), 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3.1mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.35V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3180 pF @ 10 V |
| PowerDissipation(Max) | 3.6W (Ta), 59W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PQFN (5x6) |
개요
Description
Key specifications often include a maximum drain-source voltage (V_DS), continuous drain current (I_D), and gate threshold voltage (V_GS(th)). The "TRPBF" designation indicates that it is offered in a tape-and-reel packaging for automated assembly processes and is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring environmental safety.
Its robust performance and reliability make it a popular choice in the design of power supplies, motor drivers, and other electronic devices where efficient power management is essential. For detailed characteristics, consulting the manufacturer's datasheet is recommended.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 75A, allowing it to manage significant load requirements.
3. On-Resistance: The MOSFET boasts a low on-resistance (Rds(on)) of approximately 8.5 mΩ at a gate-source voltage (Vgs) of 10V, ensuring efficient operation with minimal power loss.
4. Fast Switching: It offers fast switching capabilities, making it ideal for applications like power management and DC-DC converters.
5. Package: The IRFH8318TRPBF is housed in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges between 2V to 4V, allowing for effective control in low-voltage circuits.
Overall, the IRFH8318TRPBF is suitable for various applications, including automotive, industrial, and consumer electronics, due to its robust performance and efficiency.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal that receives the current.
3. Source (S) - The terminal through which the current exits.
4. Other pins - Typically include additional source and drain connections for enhanced thermal performance and current handling capabilities.
The IRFH8318TRPBF is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications. It is commonly used in power supplies, automotive systems, and other electronic devices requiring efficient power management.
Manufacturer
Application
Equivalent
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