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IRFHS8342TRPBF
MOSFET N-CH 30V 8.8A/19A TSDSON
- 제조업체
- Mfr.부분 #IRFHS8342TRPBF
- 패키지
- 데이터시트 IRFHS8342TRPBF DataSheet
- 재고 있음4134
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사양
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
| Power Dissipation (Max) | 2.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-PQFN (2x2) (DFN2020) |
| Package / Case | 6-PowerVDFN |
| Base Product Number | IRFHS8342 |
개요
Description
The designation typically includes information about the characteristics and specifications of the device, such as its voltage and current ratings, package type, and possibly its intended application. Understanding the data sheet for this component is essential for engineers and designers to ensure compatibility and performance in their projects.
For precise details, including pin configuration, maximum ratings, and application notes, it’s best to consult the manufacturer's documentation or data sheet related to IRFHS8342TRPBF.
Features
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 30V, making it suitable for various low voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 35A, enabling efficient power management.
3. Low R_DS(on): With a low on-resistance (R_DS(on)), typically around 10 mΩ, it ensures minimal power loss during operation, enhancing thermal performance.
4. Fast Switching: Optimized for high-speed switching applications, it reduces transition losses, which is beneficial for power converters and motor drivers.
5. Package: Available in a TO-220 package, it offers good thermal dissipation, which is critical for reliable performance in demanding environments.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2V, ensuring compatibility with various control signals.
These features make the IRFHS8342TRPBF suitable for applications in power supplies, automotive, and industrial control systems.
Package
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Drain connection for the first N-channel MOSFET.
3. Source 1 (S1) - Source connection for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Drain connection for the second N-channel MOSFET.
6. Source 2 (S2) - Source connection for the second N-channel MOSFET.
7. Common Source (CS) - Typically connected to ground or common reference.
8. Common Drain (CD) - Provides a common connection point for the drains of both MOSFETs.
This device is designed for high efficiency and is commonly used in power management applications. Its low on-resistance and fast switching capabilities make it suitable for various electronic circuits.
Manufacturer
Application
Equivalent
1. BSS84 - Low voltage N-channel MOSFET.
2. AO3400 - Similar N-channel MOSFET with comparable specifications.
3. IRLB8743 - N-channel MOSFET with low Rds(on).
Always check specific datasheets for voltage, current ratings, and package compatibility before substituting.
배송
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TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
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