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IRFP23N50LPBF
MOSFET N-CH 500V 23A TO247-3
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- Mfr.부분 #IRFP23N50LPBF
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사양
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
| Power Dissipation (Max) | 370W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Base Product Number | IRFP23 |
개요
Description
This MOSFET features low on-state resistance (R_DS(on)) of 0.47Ω at V_GS = 10V, which minimizes conduction losses and enhances thermal performance. The device is optimized for fast switching speeds, making it ideal for applications requiring rapid transitions. Additionally, its built-in gate protection and robust package design contribute to reliability under challenging conditions.
The IRFP23N50LPBF is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting in various circuit configurations. It is often used in industrial and consumer electronics, where efficient power management is critical. Overall, the IRFP23N50LPBF is a versatile choice for designers seeking robust performance in high-voltage applications.
Features
1. Voltage Rating: It can handle up to 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current of up to 23A, allowing for significant power handling.
3. RDS(on): The on-resistance is low (typically around 0.25 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, facilitating easy drive with logic-level signals.
5. Package Type: It is available in an TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching: The device features fast switching capabilities, making it ideal for applications like power supplies and motor drives.
7. Thermal Resistance: Low thermal resistance ensures effective heat management.
These attributes make the IRFP23N50LPBF suitable for a variety of applications, including power management, industrial automation, and renewable energy systems.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation, allowing it to turn on or off based on the input voltage. Applying a sufficient positive voltage relative to the source turns the device on.
2. Drain (D): This is the pin where the current enters the MOSFET when it is in the 'on' state. The drain is connected to the load in a typical application.
3. Source (S): This pin is where current exits the MOSFET. It is typically connected to ground in low-side switch configurations.
The IRFP23N50LPBF has a voltage rating of 500V and a continuous current rating of 23A, making it suitable for high voltage applications.
Manufacturer
Application
Equivalent
1. STP23NM50
2. FQA23N50
3. MTP23N50
4. IXFH23N50
Always verify specifications like voltage, current, R_DS(on), and package type to ensure compatibility in your application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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