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IRFP240
MOSFET N-CH 200V 20A TO247-3
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- Mfr.부분 #IRFP240
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사양
| Supplier | Vishay Siliconix |
| Package | Tube |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
개요
Description
- Ratings: Vds 200 V; Id continuous about 14 A; Rds(on) typically around 0.28 Ω (at Vgs = 10 V, Tc ≈ 25°C).
- Gate drive: Not a logic-level device; needs ~10 V on the gate for low Rds(on).
- Package: Commonly TO-220 (through-hole), with RoHS variants (e.g., PBF).
- Use cases: Switching regulators, DC-DC converters, motor drivers, high-voltage switching circuits.
- Pros/cons: Robust HV device with simple drive; higher Rds(on) and gate charge than many modern HV MOSFETs, so heat sinking and proper drive are important.
- Notes: Widely available, especially in older or hobbyist designs; verify exact part variant and datasheet for thermal limits and conditions.
In short: a rugged 200 V N-channel MOSFET suitable for high-voltage switching, but newer parts can offer lower on-resistance and better efficiency.
Features
- N-channel, enhancement-mode power MOSFET
- VDS = 200 V; ID (continuous) ~14 A
- RDS(on) ≈ 0.18–0.25 Ω at VGS = 10 V (typ)
- Gate threshold ~2–4 V; VGS max ±20 V
- Fast switching suitable for PWM and switching supplies
- Avalanche-rated / rugged for energy absorption
- TO-220AB package (through-hole)
- Used for high-voltage switching and linear power applications
- Manufacturer: International Rectifier (now part of Infineon)
Package
Pinout
1. Gate — control terminal (voltage input to turn MOSFET on/off)
2. Drain — high-voltage terminal (connected to the metal tab/heatsink)
3. Source — return/low-side terminal (current flows out here when on)
Function: it’s an N-channel enhancement-mode MOSFET used for switching and linear amplification of high-voltage/high-current signals.
Manufacturer
Application
- Switch‑mode/offline SMPS and DC–DC converters
- Motor/actuator drivers (DC motors, steppers)
- Inverters and H‑bridge circuits
- Class D audio power amplifiers
- Solar/battery power electronics and other 200 V range switching circuits
Equivalent
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