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IRFP250NPBF
MOSFET N-CH 200V 30A TO247AC
- 제조업체
- Mfr.부분 #IRFP250NPBF
- 패키지 TO247
- 데이터시트 IRFP250NPBF DataSheet
- 재고 있음4537
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사양
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 75mOhm @ 18A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 123 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2159 pF @ 25 V |
| PowerDissipation(Max) | 214W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
개요
Description
The IRFP250NPBF is housed in a TO-220 package, offering good thermal performance and ease of heatsinking. It operates efficiently in various environments, making it a popular choice in industrial and consumer electronics. As part of the International Rectifier's product line, it is designed to meet stringent quality and reliability standards, ensuring longevity in demanding applications. The suffix "PBF" indicates that it is lead-free, aligning with environmental compliance initiatives.
Features
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 50A, allowing it to manage significant loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 0.08 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy interfacing with low-voltage control circuits.
5. Fast Switching Speed: The device provides high switching speeds, making it suitable for applications in power supplies and motor control.
6. Thermal Performance: It features a robust package design (TO-220) for effective heat dissipation.
Overall, the IRFP250NPBF is ideal for applications requiring high efficiency, reliability, and performance in power management.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied between the gate and source allows the device to turn on or off.
2. Drain (D) - This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
In summary, the IRFP250NPBF features three pins: Gate (G), Drain (D), and Source (S), functioning primarily as a switch or amplifier in various electronic applications.
Manufacturer
Application
Equivalent
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