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IRFP4468
Infineon
- 제조업체
- Mfr.부분 #IRFP4468
- 패키지
- 데이터시트 IRFP4468 DataSheet
- 재고 있음15337
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사양
개요
Description
The IRFP4468 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It is notable for its low on-resistance (R_DS(on)), high-speed switching capabilities, and robust thermal performance. With a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of up to 94A, the IRFP4468 is suitable for various applications, including DC-DC converters, motor drives, and power inverters.
The device features a TO-220 package that facilitates efficient heat dissipation, making it ideal for high-power scenarios. Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for easy control with standard logic levels. Additionally, the IRFP4468 has a fast switching time, which reduces switching losses in high-frequency applications. Overall, the IRFP4468 is widely used in both industrial and consumer electronics due to its reliability and performance characteristics.
The device features a TO-220 package that facilitates efficient heat dissipation, making it ideal for high-power scenarios. Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for easy control with standard logic levels. Additionally, the IRFP4468 has a fast switching time, which reduces switching losses in high-frequency applications. Overall, the IRFP4468 is widely used in both industrial and consumer electronics due to its reliability and performance characteristics.
Features
The IRFP4468 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 55V, suitable for various power applications.
2. Current Rating: Continuous drain current (Id) up to 90A, allowing for high power handling.
3. Low RDS(on): On-resistance (RDS(on)) typically around 0.016 ohms, minimizing conduction losses and improving efficiency.
4. Fast Switching Speed: Optimized for high-speed switching applications, making it ideal for power supplies and motor drives.
5. Thermal Stability: Good thermal performance with a maximum junction temperature of 175°C, ensuring reliability under demanding conditions.
6. Package Type: Available in TO-220 and D2PAK packages, facilitating easy heat dissipation and mounting.
7. Gate Threshold Voltage: Low gate threshold voltage (Vgs), enhancing compatibility with low-voltage drive circuits.
These features make the IRFP4468 suitable for applications such as DC-DC converters, inverters, and electric vehicle systems.
1. Voltage Rating: Maximum drain-source voltage (Vds) of 55V, suitable for various power applications.
2. Current Rating: Continuous drain current (Id) up to 90A, allowing for high power handling.
3. Low RDS(on): On-resistance (RDS(on)) typically around 0.016 ohms, minimizing conduction losses and improving efficiency.
4. Fast Switching Speed: Optimized for high-speed switching applications, making it ideal for power supplies and motor drives.
5. Thermal Stability: Good thermal performance with a maximum junction temperature of 175°C, ensuring reliability under demanding conditions.
6. Package Type: Available in TO-220 and D2PAK packages, facilitating easy heat dissipation and mounting.
7. Gate Threshold Voltage: Low gate threshold voltage (Vgs), enhancing compatibility with low-voltage drive circuits.
These features make the IRFP4468 suitable for applications such as DC-DC converters, inverters, and electric vehicle systems.
Package
The IRFP4468 is typically packaged in a TO-220 format, which features a metal tab for heat dissipation and is designed for efficient thermal management in power applications.
Pinout
The IRFP4468 is a N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. It requires a voltage to turn the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the ON state.
3. Source (S): This pin is connected to ground or the lower potential in the circuit. The source pin serves as the reference point for the voltage applied to the gate.
The IRFP4468 is designed for high-power applications, featuring fast switching speeds and low on-resistance, making it suitable for use in power inverters, motor drivers, and other switching applications.
1. Gate (G): This pin is used to control the MOSFET. It requires a voltage to turn the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the ON state.
3. Source (S): This pin is connected to ground or the lower potential in the circuit. The source pin serves as the reference point for the voltage applied to the gate.
The IRFP4468 is designed for high-power applications, featuring fast switching speeds and low on-resistance, making it suitable for use in power inverters, motor drivers, and other switching applications.
Manufacturer
The IRFP4468 is manufactured by Infineon Technologies, a global semiconductor manufacturer based in Germany. Infineon specializes in a wide range of semiconductor products, including power management, automotive, industrial, and security solutions. The company is known for its innovation in power semiconductor technologies, offering products that enhance energy efficiency and performance in various applications. Infineon's expertise spans across sectors such as automotive electronics, renewable energy, and IoT, making it a key player in the semiconductor industry.
Application
The IRFP4468 is a high-power N-channel MOSFET commonly used in applications such as DC-DC converters, motor drives, and power inverters. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and renewable energy systems. Additionally, it is used in battery management systems and audio amplification circuits for efficient power handling.
Equivalent
The IRFP4468 is an N-channel MOSFET with specific characteristics. Equivalent products include:
1. IRFP4467
2. IRFP4466
3. STP40NF10 (with slightly different specifications)
4. BTA40-800V (for comparable applications, though it's a thyristor)
Always check the datasheets for voltage, current ratings, and RDS(on) to ensure compatibility with your specific application.
1. IRFP4467
2. IRFP4466
3. STP40NF10 (with slightly different specifications)
4. BTA40-800V (for comparable applications, though it's a thyristor)
Always check the datasheets for voltage, current ratings, and RDS(on) to ensure compatibility with your specific application.
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