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IRFP4868PBF
MOSFET N-CH 300V 70A TO247AC
- 제조업체
- Mfr.부분 #IRFP4868PBF
- 패키지 TO-247AC
- 데이터시트 IRFP4868PBF DataSheet
- 재고 있음4742
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사양
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 300 V |
| Current-ContinuousDrain(Id)@25°C | 70A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 32mOhm @ 42A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 10774 pF @ 50 V |
| PowerDissipation(Max) | 517W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
개요
Description
The IRFP4868PBF is packaged in a TO-220 form factor, allowing for effective heat dissipation and ease of mounting. It also has a fast switching speed, making it ideal for high-frequency applications. The "PBF" suffix indicates that the part is RoHS compliant, meaning it is free from hazardous substances, which is important for environmental considerations. Overall, the IRFP4868PBF is a reliable choice for engineers seeking efficient power solutions in various electronics projects.
Features
1. Voltage Rating: 55V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 75A, suitable for high-load applications.
3. On-Resistance: Low R_DS(on) of 0.034 ohms at V_GS = 10V, which ensures minimal power loss during operation.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for easy drive with standard gate voltages.
5. Package: Available in a TO-220 package, providing good thermal performance and easy mounting.
6. Switching Speed: Fast switching capability, making it suitable for PWM applications and efficient power conversion.
7. Thermal Resistance: Low thermal resistance junction-to-case, enhancing heat dissipation.
Overall, the IRFP4868PBF is ideal for applications such as DC-DC converters, motor drives, and inverters, providing high efficiency and reliability.
Package
Pinout
1. Gate (G): This pin controls the ON/OFF state of the MOSFET by applying voltage.
2. Drain (D): This pin is connected to the load and carries the current when the MOSFET is in the ON state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
This MOSFET is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for various power management and conversion applications. Its features include low gate charge and high efficiency, which are ideal for applications in power supply circuits, motor control, and other electronic devices.
Manufacturer
Application
Equivalent
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