IRFR15N20DTRPBF

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IRFR15N20DTRPBF

MOSFET N-CH 200V 17A DPAK

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사양

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 17A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 165mOhm @ 10A, 10V
Vgs(th)(Max)@Id 5.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 41 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 910 pF @ 25 V
PowerDissipation(Max) 3W (Ta), 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-PAK (TO-252AA)

개요

Description

The IRFR15N20DTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 15A, making it suitable for various applications, including power supplies, motor control, and DC-DC converters.
This MOSFET is characterized by its low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing overall efficiency. It also has a fast switching speed, enabling it to operate effectively in high-frequency applications. The device is housed in a TO-220 package, providing good thermal performance and ease of mounting.
The IRFR15N20DTRPBF is appreciated for its reliability and performance in demanding environments, making it a popular choice among engineers for designing robust electronic systems.

Features

The IRFR15N20DTRPBF is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Drain-Source Voltage (V_DS): 200V, enabling its use in high-voltage applications.
2. Continuous Drain Current (I_D): 15A, providing ample current handling for various applications.
3. Gate Threshold Voltage (V_GS(th)): 2-4V, ensuring it can be easily driven by standard logic levels.
4. R_DS(on): 0.15Ω (typical at V_GS = 10V), offering low on-resistance for reduced power losses.
5. Fast Switching Speed: Optimized for quick turn-on and turn-off times, enhancing efficiency in switching circuits.
6. Package Type: TO-220, allowing for effective heat dissipation.
7. RoHS Compliant: Free from hazardous substances, making it environmentally friendly.
These characteristics make the IRFR15N20DTRPBF suitable for applications in power supplies, motor control, and other switching environments.

Package

The IRFR15N20DTRPBF is packaged in a TO-220 format, which is a type of metal can package designed for power devices. This package provides effective thermal dissipation and is suitable for high-power applications.

Manufacturer

The IRFR15N20DTRPBF is manufactured by Infineon Technologies AG, a prominent global semiconductor manufacturer. Infineon specializes in providing a wide range of products, including power semiconductors, sensors, microcontrollers, and integrated circuits that serve various applications in automotive, industrial, and consumer electronics sectors. The company is known for its focus on innovation and sustainability, offering solutions that enhance energy efficiency and support the growth of smart technologies.

Application

The IRFR15N20DTRPBF is an N-channel MOSFET commonly used in power management applications, including switch-mode power supplies, motor control, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for automotive applications, industrial equipment, and renewable energy systems like solar inverters. Additionally, it can be employed in consumer electronics for efficient power distribution.

Equivalent

The IRFR15N20DTRPBF is a N-channel MOSFET. Equivalent products include:
1. STP15NF20 by STMicroelectronics
2. FQP15N20 by Fairchild Semiconductor
3. MTP15N20E by ON Semiconductor
4. IRF320 by International Rectifier
Always verify specifications such as voltage ratings, current ratings, and package type for compatibility.

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