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IRFR4104TRPBF
MOSFET N-CH 40V 42A DPAK
- 제조업체
- Mfr.부분 #IRFR4104TRPBF
- 패키지
- 데이터시트 IRFR4104TRPBF DataSheet
- 재고 있음3031
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사양
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 42A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IRFR4104 |
개요
Description
The "IR" indicates that the component is manufactured by International Rectifier, a company known for its power management solutions. The "F" often signifies a specific package type or technology, while "TRPBF" suggests that the component is provided in a reel packaging format and is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards.
This MOSFET is widely used in various electronic applications, including power supplies, motor drives, and automotive systems, due to its reliability and efficiency in handling high currents and voltages. Understanding the specifications and applications of IRFR4104TRPBF is crucial for engineers and designers in the field of electronics and power systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40 V, making it suitable for various power applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 55 A at a temperature of 25°C, providing robust performance in demanding conditions.
3. R_DS(on): The on-resistance is low, typically around 0.014 ohms, which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 1 to 2.5 V, allowing for easy control by low-voltage logic levels.
5. Package: It is available in the TO-220 package, facilitating effective heat dissipation for enhanced reliability.
6. Fast Switching: Designed for quick switching times, making it ideal for applications like power supplies, motor drives, and RF amplifiers.
Overall, the IRFR4104TRPBF combines high efficiency with robust performance, making it suitable for various electronic applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows into this pin when the MOSFET is conducting.
4. Body Diode: While not a separate pin, the MOSFET includes an intrinsic body diode that allows current to flow from source to drain when the MOSFET is off.
The device is designed for high-speed switching applications and features low on-resistance and high current handling capabilities.
Manufacturer
Application
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