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IRFR420TRPBF
MOSFET N-CH 500V 2.4A DPAK
- 제조업체
- Mfr.부분 #IRFR420TRPBF
- 패키지 TO-252-3
- 데이터시트 IRFR420TRPBF DataSheet
- 재고 있음6168
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사양
| Package | Tape & Reel (TR) |
| Series | HEXFET® |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 2.4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3Ohm @ 1.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 360 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 42W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-PAK (TO-252AA) |
개요
Description
Its robust construction allows for high-temperature operation, enhancing reliability in demanding environments. The IRFR420TRPBF typically supports high voltage ratings, making it ideal for industrial applications. The MOSFET's gate threshold voltage ensures compatibility with standard driving circuits, while its fast recovery time improves overall efficiency.
Overall, the IRFR420TRPBF is a versatile component that offers excellent performance characteristics for modern electronic designs, contributing to energy savings and improved system performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for medium-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, allowing it to manage significant loads.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of around 0.04 ohms at V_GS = 10V, which contributes to lower power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, enabling efficient switching at lower gate voltages.
5. Package: It is available in a TO-220 package, providing good thermal dissipation.
6. Fast Switching Speed: The IRFR420TRPBF has a rapid switching capability, making it suitable for applications like power supplies and motor controls.
These features make the IRFR420TRPBF a versatile choice for high-efficiency power management solutions.
Package
Pinout
The pinout is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Additional pins (if applicable) are typically for various package configurations or thermal considerations, as necessary.
The IRFR420TRPBF is noted for its low on-resistance and high-speed operation, making it suitable for efficient power applications. Always refer to the manufacturer's datasheet for precise specifications and characteristics.
Manufacturer
Application
Equivalent
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