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IRFR4620TRLPBF
MOSFET N-CH 200V 24A DPAK
- 제조업체
- Mfr.부분 #IRFR4620TRLPBF
- 패키지 TO-252-3
- 데이터시트 IRFR4620TRLPBF DataSheet
- 재고 있음6776
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 24A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 78mOhm @ 15A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1710 pF @ 50 V |
| PowerDissipation(Max) | 144W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
개요
Description
Key features of IRFR4620TRLPBF may include a low on-resistance, high-speed switching capability, and robustness suitable for various electronic applications, including automotive, industrial, and consumer electronics. The "TR" designation usually indicates that the product is supplied in tape and reel packaging for automated assembly processes.
When selecting a MOSFET like IRFR4620TRLPBF, it’s essential to consider parameters such as maximum voltage rating, current handling capacity, thermal performance, and gate threshold voltage to ensure compatibility with specific circuit requirements. Always refer to the manufacturer's datasheet for detailed specifications and recommendations.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various power applications.
2. Current Rating: The device supports a continuous drain current (Id) of up to 62A, allowing it to handle significant load.
3. Low RDS(on): With a low on-resistance (RDS(on)) of approximately 0.018Ω at Vgs = 10V, it minimizes conduction losses.
4. Fast Switching: The MOSFET offers rapid switching speeds, enhancing efficiency in PWM and other high-frequency applications.
5. Thermal Performance: It comes in a TO-220 package, providing good thermal dissipation for high-current applications.
6. Gate Threshold Voltage: The threshold voltage (Vgs(th)) ranges from 2V to 4V, ensuring compatibility with low-voltage gate drive circuits.
These features make the IRFR4620TRLPBF suitable for power management, motor control, and other high-efficiency applications.
Package
Pinout
1. Gate (G): This pin controls the switching of the MOSFET; applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows out when the device is on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit; current enters the source when the MOSFET is activated.
4. Body Diode: Internally connected but not a separate pin; it allows reverse current flow when needed.
The IRFR4620TRLPBF is designed for high-efficiency applications and can handle significant power, making it suitable for various switching and amplification tasks in electronic circuits.
Manufacturer
Application
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