IRFR5410TRPBF

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IRFR5410TRPBF

MOSFET P-CH 100V 13A DPAK

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사양

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 13A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 205mOhm @ 7.8A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 58 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 760 pF @ 25 V
PowerDissipation(Max) 66W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

개요

Description

IRFR5410TRPBF is a model of a high-frequency, low-noise operational amplifier (op-amp) manufactured by Texas Instruments. It is designed for precision applications requiring low distortion and high slew rates. Key features include a wide bandwidth, low input bias current, and high common-mode rejection ratio (CMRR). The device is commonly used in audio applications, instrumentation, and signal processing tasks where accurate amplification of small signals is crucial.
This op-amp operates on a dual supply voltage, making it versatile for various circuits, and it is housed in a compact package, facilitating efficient PCB design. Its low noise characteristics make it suitable for applications in medical devices and other sensitive electronic equipment. Overall, IRFR5410TRPBF offers reliable performance for designers seeking high-quality amplification solutions in their projects.

Features

The IRFR5410TRPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power management applications.
2. Current Rating: The maximum continuous drain current (I_D) is around 49A, providing robust performance in demanding conditions.
3. R_DS(on): It features a low on-resistance (around 10 mΩ), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Fast Switching: Designed for fast switching speeds, it helps optimize performance in high-frequency applications.
6. Package: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting.
Overall, the IRFR5410TRPBF is suitable for applications such as DC-DC converters, motor control, and other power electronic circuits where efficiency and performance are critical.

Package

The IRFR5410TRPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power transistors, providing efficient thermal management and ease of mounting.

Pinout

The IRFR5410TRPBF is an N-channel MOSFET with a pin count of 3. The function of each pin is as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the current flows out of the device when it is turned on.
3. Source (S): This pin is the input where the current enters the device when it is conducting.
The IRFR5410TRPBF is designed for high-speed switching applications and has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 33A.

Manufacturer

The IRFR5410TRPBF is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and communication technologies. The company is known for its expertise in power semiconductors, sensors, microcontrollers, and security solutions, serving a wide range of industries. With a strong focus on innovation and sustainability, Infineon plays a significant role in advancing technologies such as electric vehicles, renewable energy, and the Internet of Things (IoT).

Application

The IRFR5410TRPBF is a N-channel MOSFET used primarily in power management applications, such as DC-DC converters, motor drives, and power switching circuits. Its low on-resistance and high current capacity make it suitable for applications in automotive systems, industrial automation, and renewable energy systems. Additionally, it can be utilized in power tools and consumer electronics for efficient power delivery.

Equivalent

The IRFR5410TRPBF is an N-channel MOSFET. Equivalent products include the FQP50N06L, AOD6N60, and STP55NF06. It's important to check the specific parameters like voltage, current ratings, and package type to ensure compatibility. Always refer to the datasheets for detailed specifications.

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