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IRFR5410TRPBF
MOSFET P-CH 100V 13A DPAK
- 제조업체
- Mfr.부분 #IRFR5410TRPBF
- 패키지 TO-252-3
- 데이터시트 IRFR5410TRPBF DataSheet
- 재고 있음7234
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 205mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 58 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 760 pF @ 25 V |
| PowerDissipation(Max) | 66W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
개요
Description
This op-amp operates on a dual supply voltage, making it versatile for various circuits, and it is housed in a compact package, facilitating efficient PCB design. Its low noise characteristics make it suitable for applications in medical devices and other sensitive electronic equipment. Overall, IRFR5410TRPBF offers reliable performance for designers seeking high-quality amplification solutions in their projects.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power management applications.
2. Current Rating: The maximum continuous drain current (I_D) is around 49A, providing robust performance in demanding conditions.
3. R_DS(on): It features a low on-resistance (around 10 mΩ), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Fast Switching: Designed for fast switching speeds, it helps optimize performance in high-frequency applications.
6. Package: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting.
Overall, the IRFR5410TRPBF is suitable for applications such as DC-DC converters, motor control, and other power electronic circuits where efficiency and performance are critical.
Package
Pinout
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the current flows out of the device when it is turned on.
3. Source (S): This pin is the input where the current enters the device when it is conducting.
The IRFR5410TRPBF is designed for high-speed switching applications and has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 33A.
Manufacturer
Application
Equivalent
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