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IRFR5505TRPBF
MOSFET P-CH 55V 18A DPAK
- 제조업체
- Mfr.부분 #IRFR5505TRPBF
- 패키지 TO-252-3
- 데이터시트 IRFR5505TRPBF DataSheet
- 재고 있음7753
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 110mOhm @ 9.6A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 650 pF @ 25 V |
| PowerDissipation(Max) | 57W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
개요
Description
The "TRPBF" designation indicates that the MOSFET is packaged in a specific configuration (usually a TO-220 package) and is RoHS-compliant, meaning it adheres to environmental regulations regarding hazardous substances. Key specifications include gate threshold voltage, maximum drain-source voltage, and maximum continuous drain current, all of which are critical for ensuring optimal performance in demanding applications.
Overall, IRFR5505TRPBF is ideal for designers seeking reliability and efficiency in their power management solutions.
Features
1. Voltage Rating: Supports a maximum drain-to-source voltage (Vds) of 55V.
2. Current Rating: Capable of handling continuous drain currents up to 50A, making it suitable for high-power applications.
3. Low On-Resistance: It has a low Rds(on) typically around 0.032 ohms at a gate-source voltage (Vgs) of 10V, enhancing efficiency by minimizing power loss.
4. Fast Switching Speed: Suitable for high-frequency applications due to its rapid switching capabilities.
5. Thermal Performance: Packaged in a TO-220 form factor, allowing for effective heat dissipation.
6. Gate Threshold Voltage: It features a gate threshold voltage (Vgs(th)) of 2-4V, enabling operation with lower gate drive voltages.
7. Robust Design: The device is designed for reliability in automotive and industrial applications.
Overall, the IRFR5505TRPBF is well-suited for use in power management, motor control, and switching applications.
Package
Pinout
1. Gate (G): Controls the MOSFET's operation; applies voltage to turn the device on or off.
2. Drain (D): The current flows out of the MOSFET when it is turned on.
3. Source (S): The current enters the MOSFET from the source terminal.
The pinout configuration is as follows:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Source
- Pin 5: Drain
- Pin 6: Drain
- Pin 7: Gate
- Pin 8: Source
This device is designed for high-speed switching applications and is commonly used in power management circuits. It has low on-resistance and high-speed switching capabilities, making it suitable for various power applications.
Manufacturer
Application
Equivalent
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