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IRFR6215TRPBF
IRFR6215 - 20V-250V P-CHANNEL PO
- 제조업체
- Mfr.부분 #IRFR6215TRPBF
- 패키지 TO-252-3
- 데이터시트 IRFR6215TRPBF DataSheet
- 재고 있음3844
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사양
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 295mOhm @ 6.6A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 66 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 860 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
개요
Description
Key specifications typically include a maximum drain-source voltage (V_DS), a specified continuous drain current (I_D), and low gate threshold voltage (V_GS). Its thermal performance is enhanced by the ability to dissipate heat effectively, allowing for reliable operation in demanding environments.
Overall, IRFR6215TRPBF is ideal for engineers seeking efficient and reliable MOSFET solutions for modern electronic designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, allowing for use in low-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain current (I_D) of up to 62A, making it suitable for high-current scenarios.
3. R_DS(on): It offers a low on-resistance of about 0.016 ohms, which contributes to reduced power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 2.0V to 4.0V, allowing for efficient control with standard logic levels.
5. Package: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device is designed for fast switching applications, making it ideal for power management and converter circuits.
Overall, the IRFR6215TRPBF is a robust choice for applications requiring efficient power switching in compact designs.
Package
Pinout
The pin configuration is as follows:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Drain (D)
5. Source (S)
6. Gate (G)
7. Source (S)
8. Drain (D)
For specific applications, it’s essential to consult the datasheet for detailed electrical characteristics and operational guidelines.
Manufacturer
Application
Equivalent
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