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IRFZ34NPBF
MOSFET N-CH 55V 29A TO220AB
- 제조업체
- Mfr.부분 #IRFZ34NPBF
- 패키지 TO-220-3
- 데이터시트 IRFZ34NPBF DataSheet
- 재고 있음5384
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사양
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 700 pF @ 25 V |
| PowerDissipation(Max) | 68W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
Key specifications include a low on-resistance (R_DS(on)) of around 0.035 ohms, which minimizes power loss during operation. The MOSFET features a gate threshold voltage (V_GS(th)) of 2-4V, enabling it to be driven by low-voltage logic levels. Its TO-220 package allows for efficient heat dissipation, which is crucial for maintaining performance and reliability in demanding environments.
The IRFZ34NPBF is also RoHS compliant, making it an environmentally friendly choice for circuit designs. Overall, it is a versatile component ideal for various electronic applications requiring efficient power switching.
Features
- Voltage Rating: 55V maximum drain-source voltage (V_DS).
- Current Rating: Continuous drain current (I_D) of 30A, allowing for substantial load handling.
- On-Resistance: Low R_DS(on) of 0.035 ohms (at V_GS = 10V), which minimizes power loss during operation.
- Gate Threshold Voltage: V_GS(th) of 2-4V, suitable for logic-level drive compatibility.
- Package: Available in TO-220 and DPAK, facilitating easy integration into various circuits.
- Fast Switching: Capable of high-speed switching with low gate charge (Q_g), making it ideal for applications like motor control, power supplies, and DC-DC converters.
- Thermal Performance: Equipped for good thermal management with a high maximum junction temperature of 150°C.
Overall, the IRFZ34NPBF is excellent for power management applications requiring efficiency and reliability.
Package
Pinout
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the on state. It is connected to the load in a switching application.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground in low-side switching configurations.
The IRFZ34NPBF is designed for high-efficiency power switching applications, featuring a maximum continuous drain current rating of 30A and a maximum drain-source voltage of 55V.
Manufacturer
Application
Equivalent
1. STP34NF10
2. FQP34N10
3. AOD404
4. BSS138
5. IRFZ44N
Always verify the electrical specifications and ratings to ensure compatibility for your specific application.
배송
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