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IRFZ34NSTRLPBF
MOSFET N-CH 55V 29A D2PAK
- 제조업체
- Mfr.부분 #IRFZ34NSTRLPBF
- 패키지 TO-252-3
- 데이터시트 IRFZ34NSTRLPBF DataSheet
- 재고 있음6705
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 700 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 68W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 55V, a continuous drain current (I_D) of 30A, and a low on-resistance (R_DS(on)) of approximately 0.035 ohms at a gate voltage (V_GS) of 10V. This low resistance minimizes power losses, making it suitable for applications where thermal management is critical.
The IRFZ34N is also characterized by fast switching times, which enhances its performance in PWM (Pulse Width Modulation) circuits. Its TO-220 package allows for easy heat dissipation, facilitating reliable operation in various environments.
Overall, the IRFZ34NSTRLPBF is a versatile component that excels in both efficiency and performance, making it a popular choice in power electronics.
Features
- Voltage Rating: Maximum drain-source voltage (Vds) of 55V.
- Current Rating: Continuous drain current (Id) up to 30A at room temperature.
- Rds(on): Low on-resistance of approximately 0.045Ω, which enhances efficiency and reduces heat generation.
- Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, allowing for easy interfacing with low-voltage control signals.
- Package Type: Available in a TO-220 package, which facilitates heat dissipation.
- Fast Switching: Suitable for high-speed applications and can switch efficiently at high frequencies.
- Applications: Commonly used in power supplies, motor control, and other high-efficiency switching applications.
Overall, the IRFZ34NSTRLPBF is a versatile and reliable component ideal for various electronic power regulation and switching circuits.
Package
Pinout
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current enters the MOSFET. It is connected to the load in a typical circuit.
3. Source (S): This pin is where the current exits the MOSFET. It is usually connected to ground or the lower potential in the circuit.
The IRFZ34N is commonly used in various applications, including power switching, motor control, and DC-DC converters, owing to its high efficiency and low on-resistance characteristics.
Manufacturer
Application
Equivalent
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