IRGP4660D-EPBF

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IRGP4660D-EPBF

IGBT 600V 100A TO247AD

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Supplier Rochester Electronics, LLC,Infineon Technologies
Package Bulk,Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 100 A
Current-CollectorPulsed(Icm) 144 A
Vce(on)(Max)@VgeIc 1.9V @ 15V, 48A
Power-Max 330 W
SwitchingEnergy 625µJ (on), 1.28mJ (off)
InputType Standard
GateCharge 140 nC
Td(on/off)@25°C 60ns/145ns
TestCondition 400V, 48A, 10Ohm, 15V
ReverseRecoveryTime(trr) 115 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

개요

Description

IRGP4660D-EPBF is a high-performance N-channel MOSFET designed for applications requiring low on-resistance and high-speed switching. It features a low gate charge, enabling efficient operation in power management, DC-DC converters, and industrial applications. With a maximum drain-source voltage of 60V and a continuous drain current of up to 80A, it is suitable for demanding environments. The device is packaged in a TO-220 format, allowing for effective heat dissipation and ease of mounting. Its fast switching capabilities and robustness make it ideal for automotive and consumer electronics applications, contributing to improved efficiency and reliability in power systems. The IRGP4660D-EPBF is also RoHS compliant, aligning with environmental standards.

Features

The IRGP4660D-EPBF is a high-speed, high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. Key features include:
1. Voltage Rating: Supports a maximum collector-emitter voltage of 600V.
2. Current Rating: Capable of handling continuous collector current up to 60A.
3. Low On-State Voltage: Offers low VCE(sat), which enhances efficiency during operation.
4. Fast Switching: Designed for high-frequency applications, reducing switching losses.
5. Thermal Performance: Excellent thermal stability and low junction-to-case thermal resistance.
6. Robustness: Features built-in protection against overcurrent and thermal runaway.
7. Package Type: Available in a TO-247 package, facilitating easy heatsinking and integration into power modules.
8. Applications: Suitable for motor drives, inverters, and other power conversion systems.
This device is ideal for applications requiring high efficiency and reliability in power electronics.

Package

The IRGP4660D-EPBF is packaged in a TO-220 format. This type of package is designed for reliable performance in high power applications, providing efficient heat dissipation and easy mounting.

Pinout

The IRGP4660D-EPBF is an N-channel IGBT (Insulated Gate Bipolar Transistor) with a total of 6 pins. The pin configuration is as follows:
1. Gate (G) - Controls the IGBT and is used to turn it on or off.
2. Collector (C) - The terminal that receives the load current when the IGBT is on.
3. Emitter (E) - The terminal that serves as the output to ground or the circuit.
4. Gate-Emitter Voltage (V_GE) - Used for protecting the gate from excessive voltages.
5. Collector-Emitter Voltage (V_CE) - The voltage rating of the collector-emitter junction.
6. Thermal Pad - Provides a means for heat dissipation to enhance thermal performance.
This device is suitable for applications like inverters, motor drives, and other high-efficiency power electronics. Its ability to handle both high voltage and current makes it versatile for various industrial applications.

Manufacturer

The IRGP4660D-EPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in providing a wide range of semiconductor solutions, focusing on automotive, industrial power control, and security technologies. Infineon's products are widely used in various applications, including power management, automotive electronics, and renewable energy systems. The company emphasizes innovation and sustainability in its offerings, aiming to enable a more connected and energy-efficient world.

Application

The IRGP4660D-EPBF is an insulated gate bipolar transistor (IGBT) primarily used in high-power applications. Its key application areas include motor drives, industrial automation, power inverters for renewable energy systems, and uninterruptible power supplies (UPS). Additionally, it is suitable for applications in electric vehicles and railway traction systems due to its efficiency in handling high voltages and currents.

Equivalent

The IRGP4660D-EPBF is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 600V and a current rating of 45A. Equivalent products include:
1. FGA25N60
2. FGH25N60
3. STGW45H60
4. MG60J6ES
5. BTA40-600V
Always verify specifications such as voltage, current, and switching characteristics before replacement.

배송

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배송 요금 참조 (DHL/FedEx):

DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.

FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.

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