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IRL520NPBF
MOSFET N-CH 100V 10A TO220AB
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- Mfr.부분 #IRL520NPBF
- 패키지
- 데이터시트 IRL520NPBF DataSheet
- 재고 있음21424
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사양
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4V, 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 440 pF @ 25 V |
| PowerDissipation(Max) | 48W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
With a high breakdown voltage and fast switching speeds, the IRL520NPBF is often used in applications such as motor control, power converters, and driver circuits. This MOSFET is particularly valued for its capability to operate at low gate voltages, which enhances its compatibility with microcontrollers and logic-level circuits.
The "N" in the name indicates that it is an N-channel device, while "PBF" denotes compliance with lead-free and RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly. Overall, the IRL520NPBF is a versatile component widely used in various electronic devices and systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 9.2A, enabling it to manage substantial loads.
3. On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.27 ohms at a gate-source voltage (V_GS) of 10V, which ensures efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing it to be driven by low-voltage signals.
5. Packaging: It is available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: The device features high-speed switching capabilities, making it ideal for applications such as PWM control.
Overall, the IRL520NPBF is a versatile and reliable MOSFET suitable for a variety of electronic applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load connects. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for current flowing through the device.
The IRL520 is designed for low-voltage applications with a maximum drain-source voltage (V_DS) of 100V and can handle a continuous drain current (I_D) of up to 9.2A. Its logic-level gate voltage allows it to be driven directly by microcontrollers.
Manufacturer
Application
Equivalent
1. IRF520 - similar specifications but with higher gate threshold.
2. STP16NF06 - rated for higher current and voltage.
3. FQP30N06L - logic-level MOSFET with similar characteristics.
4. BSS138 - lower power, typically used for smaller applications.
Always check datasheets for specific application requirements and performance characteristics.
배송
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