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IRL60HS118
MOSFET N-CH 60V 18.5A 6PQFN
- 제조업체
- Mfr.부분 #IRL60HS118
- 패키지
- 데이터시트 IRL60HS118 DataSheet
- 재고 있음6073
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사양
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
| Power Dissipation (Max) | 11.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-PQFN (2x2) (DFN2020) |
| Package / Case | 6-PowerVDFN |
| Base Product Number | IRL60HS118 |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) rating, a specific gate threshold voltage (V_GS), and thermal characteristics that allow for effective heat dissipation. Its compact package size facilitates integration into various electronic circuits, making it suitable for automotive, industrial, and consumer electronics applications.
In summary, the IRL60HS118 is engineered for efficiency and performance in power electronics, providing users with a reliable component for enhancing system design and functionality.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (Vds) of 60V, making it suitable for medium voltage applications.
2. Current Handling: Capable of handling continuous drain currents up to 80A, allowing it to drive high loads efficiently.
3. RDS(on): Low on-resistance (typically around 0.025Ω at Vgs = 10V), which helps minimize power loss and improve efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (Vgs(th)) ensures it can be driven by low-voltage logic levels.
5. Fast Switching Speed: High-speed switching capabilities reduce switching losses, making it ideal for high-frequency applications.
6. Thermal Performance: Designed with good thermal management, allowing for higher performance in compact designs.
Overall, the IRL60HS118 is well-suited for high-efficiency electronic designs requiring robust control and performance.
Package
Pinout
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation (turns it on/off).
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
4. Body Diode: Integrated within the MOSFET structure, providing reverse current capability.
The IRL60HS118 features low on-resistance and high-speed switching capabilities, which enhance efficiency in power applications. It is typically used in applications where low gate drive voltage is required.
Manufacturer
Application
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