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IRLB4030PBF
MOSFET N-CH 100V 180A TO220AB
- 제조업체
- Mfr.부분 #IRLB4030PBF
- 패키지 TO-220-3
- 데이터시트 IRLB4030PBF DataSheet
- 재고 있음3488
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사양
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 4.3mOhm @ 110A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 130 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 11360 pF @ 50 V |
| PowerDissipation(Max) | 370W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The "PBF" in its designation indicates that it is lead-free, aligning with environmental standards for electronic components. With a maximum drain-source voltage of 30V and a current rating of approximately 55A, the IRLB4030PBF can operate efficiently in a range of circuit configurations. Its compact package and thermal performance make it a preferred choice in modern electronic designs where reliability and efficiency are critical.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 78A, allowing it to manage high loads.
3. R_DS(on): The on-resistance is low (typically around 0.014 ohms at V_GS = 10V), which reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2V, enabling it to turn on effectively with low gate drive voltages.
5. Package: It is available in a TO-220 package, facilitating easy heat dissipation and mounting in various applications.
6. Applications: Commonly used in power management, DC-DC converters, and motor control systems.
These features make the IRLB4030PBF a versatile component for various electronic designs requiring efficient power handling.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): The terminal through which the current exits the MOSFET when it is on.
3. Source (S): The terminal through which the current enters the MOSFET when it is on.
4. Body Diode: Not a separate pin, but the intrinsic body diode allows current to flow from the source to the drain when the MOSFET is off.
The IRLB4030PBF is designed for high-speed switching applications and is often used in power management, motor control, and other electronic applications requiring efficient control of electrical power. It features low R_DS(on) for enhanced efficiency.
Manufacturer
Application
Equivalent
1. IRLZ44N
2. STP75NF75
3. FQP30N06L
4. BSS138
5. AO3400
Always confirm specifications such as voltage, current ratings, and Rds(on) to ensure compatibility with your application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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